LIGHT EMITTING DIODE WITH LOW REFRACTIVE INDEX MATERIAL LAYERS TO REDUCE LIGHT GUIDING EFFECTS

• US 20160172556A1
• Filed: 02/23/2016
• Published: 06/16/2016
• Est. Priority Date: 03/06/2012
• Status: Active Grant

• Current Assignee: Korrus Incorporated (MKD Electric, Inc.)
• Original Assignee: Soraa, Inc.
• Inventors: GRUNDMANN, MICHAEL J., DAVID, AURELIEN J.F.
• Granted Patent: US 10,096,755 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/02 characterised by the semiconductor bodies
• CPC Class Codes: H01L 33/04 with a quantum effect structure or superlattice, e.g. tunnel junction
• CPC Class Codes: H01L 33/10 with a light reflecting structure, e.g. semiconductor Bragg reflector
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/58 Optical field-shaping elements

Abstract

A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising: (a) at least one n-doped layer; (b) at least one p-doped layer; (c) an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the LED'"'"'s refractive index across the thickness of the active region; and (d) at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

Claims

1. A light-emitting diode (LED) for emitting emitted light having a particular wavelength, said LED comprising:

at least one n-doped layer;

at least one p-doped layer;

an active region comprising at least one layer of light-emitting material disposed between said at least one n-doped layer and said at least one p-doped layer, said active region having an average refractive index, calculated by averaging the refractive index across the thickness of said active region; and

at least one low refractive index layer disposed within said particular wavelength of said active region, said at least one low refractive index layer having a refractive index below said average refractive index and a thickness sufficient to limit light being emitted into a guided mode of said active region to no more than 10% of said emitted light.

2. The light-emitting diode of claim 1, wherein said active region comprises a Group III-nitride material.

3. The light-emitting diode of claim 1, wherein said active region is characterized by a cumulative thickness of at least 100 nm.

4. The light-emitting diode of claim 1, wherein said at least one low refractive index material layer is disposed on one side of said active region, on both sides of said active region, within said active region, or a combination of any of the foregoing.

5. The light-emitting diode of claim 1, wherein,

said active region comprises two or more quantum wells;

and

said at least one low refractive index layer comprises at least one barrier layer between said two or more quantum wells.

6. The light-emitting diode of claim 1, further comprising a substrate with a host refractive index, said refractive index of said at least one low refractive index is at least 0.05 less than said host refractive index.

7. The light-emitting diode of claim 6, wherein said active region and said at least one low refractive index material layer is characterized by an average refractive index from 0% to 5% higher than said refractive index of said host material.

8. The light-emitting diode of claim 1, further comprising:

a superlattice disposed on one side of said active region or on both sides of said active region; and

said at least one low refractive index material layer is disposed on one side of said superlattice, on both sides of said superlattice, within said superlattice, or a combination of any of the foregoing.

9. The light-emitting diode of claim 1, comprising a low-refractive index quantum well region is disposed on one side of said active region, wherein said low-refractive index quantum well region is configured to not emit a substantial amount of light.

10. The light-emitting diode of claim 9, comprising at least one low refractive index material layer surrounding said low-refractive index quantum well region.

11. A light-emitting diode (LED) comprising:

at least one n-doped layer characterized by a host refractive index;

at least one p-doped layer;

an active region comprising of at least one layer of light-emitting material, disposed between said at least one n-doped layer and said at least one p-doped layer, characterized by an average refractive index calculated across the thickness of said active region, and characterized by an optical wavelength of emitted light;

at least one low refractive index layer disposed within one optical wavelength of said active region, and configured to substantially reduce light guiding by said active region; and

a superlattice underlying said active region, wherein said at least one low refractive index material layer is disposed within a distance from said superlattice that is less than one optical wavelength,

wherein said average refractive index is from 0% to 5% higher than said host refractive index.

12. The light-emitting diode of claim 11, wherein less than 10% of total light emitted by said light-emitting material is guided by said active region.

13. The light-emitting diode of claim 11, wherein less than 2% of total light emitted by said light-emitting material is guided by said active region.

14. The light-emitting diode of claim 11, further comprising a III-nitride based material.

15. The light-emitting diode of claim 11, wherein said at least one low refractive index material layer is disposed on one side of said active region, on both sides of said active region, within said active region, or a combination of any of the foregoing.

16. The light-emitting diode of claim 11, wherein said active region comprises two or more quantum wells, wherein at least one barrier layer between said two or more quantum wells comprises a low refractive index material.

17. The light-emitting diode of claim 11, wherein said optical wavelength is within a range from about 200 nm to about 1000 nm.

18. The light-emitting diode of claim 11, wherein said active region comprises a plurality of InGaN quantum wells, and said at least one low refractive index layer comprises at least one AlGaN barrier positioned between two of said plurality of quantum wells.

19. The light-emitting diode of claim 11, wherein said superlattice comprises a plurality of InGaN superlattice layers, wherein said at least one low refractive index layer comprises at least one AlGaN layer located to said p-side of said active region and at least one AlGaN layer positioned between two of said plurality of InGaN superlattice layers.

20. The light-emitting diode of claim 19, wherein said superlattice comprises a succession of AlGaN layers and of either InGaN or AlInGaN layers.