SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxynitride semiconductor layer over an oxide insulating layer formed over an insulating surface;
selectively etching the oxynitride semiconductor layer;
forming a source electrode and a drain electrode over the oxynitride semiconductor layer after the etching step;
forming a gate insulating layer to cover the oxynitride semiconductor layer the source electrode, and the drain electrode; and
forming a gate electrode over the oxynitride semiconductor layer with the gate insulating layer therebetween.
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Abstract
An object is to provide a semiconductor device including an oxynitride semiconductor whose carrier density is controlled. By introducing controlled nitrogen into an oxide semiconductor layer, a transistor in which an oxynitride semiconductor having desired carrier density and on characteristics is used for a channel can be manufactured. Further, with the use of the oxynitride semiconductor, even when a low resistance layer or the like is not provided between an oxynitride semiconductor layer and a source electrode and between the oxynitride semiconductor layer and a drain electrode, favorable contact characteristics can be exhibited.
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Citations
11 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxynitride semiconductor layer over an oxide insulating layer formed over an insulating surface; selectively etching the oxynitride semiconductor layer; forming a source electrode and a drain electrode over the oxynitride semiconductor layer after the etching step; forming a gate insulating layer to cover the oxynitride semiconductor layer the source electrode, and the drain electrode; and forming a gate electrode over the oxynitride semiconductor layer with the gate insulating layer therebetween. - View Dependent Claims (7, 8, 9, 10, 11)
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2. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a source electrode and a drain electrode over an oxide insulating layer formed over an insulating surface; forming an oxynitride semiconductor layer over the source electrode and the drain electrode; selectively etching the oxynitride semiconductor layer; forming a gate insulating layer to cover the oxynitride semiconductor layer after the etching step, the source electrode, and the drain electrode; and forming a gate electrode over the oxynitride semiconductor layer with the gate insulating layer therebetween.
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3. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode over an insulating surface; forming a gate insulating layer to cover the gate electrode; forming an oxynitride semiconductor layer over the gate insulating layer; selectively etching the oxynitride semiconductor layer; and forming a source electrode and a drain electrode over the oxynitride semiconductor layer after the etching step.
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4. A method for manufacturing a semiconductor device, comprising the steps of:
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Banning a gate electrode over an insulating surface; forming a gate insulating layer to cover the gate electrode; forming a source electrode and a drain electrode over the gate insulating layer; forming an oxynitride semiconductor layer over the source electrode and the drain electrode; and selectively etching the oxynitride semiconductor layer.
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxynitride semiconductor layer over an oxide insulating layer formed over an insulating surface; forming a gate insulating layer over the oxynitride semiconductor layer; and forming a gate electrode to overlap with the oxynitride semiconductor layer with the gate insulating layer therebetween, wherein the oxynitride semiconductor layer includes a channel, a source region, and a drain region. - View Dependent Claims (6)
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Specification