×

LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

  • US 20160181477A1
  • Filed: 02/29/2016
  • Published: 06/23/2016
  • Est. Priority Date: 08/27/2014
  • Status: Active Grant
First Claim
Patent Images

1. A light emitting diode comprising:

  • a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers, and having at least one hole formed through the second conductive type semiconductor layer and the active layer to expose the first conductive type semiconductor layer therethrough;

    a first electrode forming ohmic contact with the first conductive type semiconductor layer through the at least one hole of the light emitting structure;

    a current spreading layer disposed on the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer, the current spreading layer including a lower current spreading layer and an upper current spreading layer disposed on the lower current spreading layer;

    a second electrode disposed on the current spreading layer;

    an insulation layer covering the light emitting structure and the current spreading layer, and including openings partially exposing the first and second electrodes; and

    a first pad and a second pad disposed on the insulation layer and electrically connected to the first and second electrodes, respectively,wherein the upper current spreading layer and the lower current spreading layer have different electrical conductivities, andwherein the at least one hole includes a first hole disposed under the first pad and a second hole including a portion disposed under the first pad and a portion disposed under a gap between the first pad and the second pad.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×