LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME

• US 20160181477A1
• Filed: 02/29/2016
• Published: 06/23/2016
• Est. Priority Date: 08/27/2014
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: Lee, So Ra, Yoon, Yeo Jin
• Granted Patent: US 9,847,458 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/40 Materials therefor
• CPC Class Codes: H01L 33/42 Transparent materials
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector

Abstract

A light emitting diode includes an n-type semiconductor layer disposed on a substrate; a p-type semiconductor layer disposed on a portion of the n-type semiconductor layer; an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer and generating light through recombination of electrons and holes; an ohmic contact layer disposed on the p-type semiconductor layer and including an indium tin oxide (ITO) layer doped with a metal, a transparent conductive layer disposed on the ohmic contact layer to a different thickness than the ohmic contact layer and including an undoped ITO layer, and a reflective layer disposed on the transparent conductive layer and including an oxide layer. Accordingly, the light emitting diode exhibits excellent current-voltage characteristics through improvement in reliability and electrical conductivity of the ohmic contact layer while improving luminous efficacy through the reflective layer formed of an oxide.

Claims

1. A light emitting diode comprising:

a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer disposed on the first conductive type semiconductor layer, and an active layer interposed between the first and second conductive type semiconductor layers, and having at least one hole formed through the second conductive type semiconductor layer and the active layer to expose the first conductive type semiconductor layer therethrough;

a first electrode forming ohmic contact with the first conductive type semiconductor layer through the at least one hole of the light emitting structure;

a current spreading layer disposed on the second conductive type semiconductor layer and forming ohmic contact with the second conductive type semiconductor layer, the current spreading layer including a lower current spreading layer and an upper current spreading layer disposed on the lower current spreading layer;

a second electrode disposed on the current spreading layer;

an insulation layer covering the light emitting structure and the current spreading layer, and including openings partially exposing the first and second electrodes; and

a first pad and a second pad disposed on the insulation layer and electrically connected to the first and second electrodes, respectively,

wherein the upper current spreading layer and the lower current spreading layer have different electrical conductivities, and

wherein the at least one hole includes a first hole disposed under the first pad and a second hole including a portion disposed under the first pad and a portion disposed under a gap between the first pad and the second pad.

2. The light emitting diode of claim 1, further including:

a current blocking layer disposed under the current spreading layer,

wherein the current blocking layer is disposed at a location corresponding to the second electrode under the second electrode.

3. The light emitting diode of claim 1, wherein the upper current spreading layer has a lower electrical conductivity than the lower current spreading layer.

4. The light emitting diode of claim 1, wherein the first electrode includes:

a first ohmic contact electrode disposed under the first pad and forming ohmic contact with the first conductive type semiconductor layer through the first hole; and

a second ohmic contact electrode including a main electrode disposed under the first pad, and an extension electrode extending from the main electrode to a portion under a region between the first pad and the second pad, the second ohmic contact electrode forming ohmic contact with the first conductive type semiconductor layer through the second hole.

5. The light emitting diode of claim 4, wherein the extension electrode of the second ohmic contact electrode further extends to a region under the second pad.

6. The light emitting diode of claim 5, wherein the extension electrode of the second ohmic contact electrode is covered by the insulation layer.

7. The light emitting diode of claim 1, wherein the second electrode includes:

a first connection electrode disposed under the second pad; and

a second connection electrode including a main electrode disposed under the second pad and an extension electrode extending from the main electrode to a portion under a region between the first pad and the second pad.

8. The light emitting diode of claim 7, wherein the extension electrode of the second connection electrode further extends to a region under the first pad.

9. The light emitting diode of claim 1, wherein the insulation layer includes a lower insulation layer and an upper insulation layer disposed on the lower insulation layer.

10. The light emitting diode of claim 9, wherein the lower insulation layer has a thickness than is greater than a thickness the upper insulation layer, and the upper insulation layer includes a distributed Bragg reflector.

11. The light emitting diode of claim 10, wherein the upper insulation layer includes at least two distributed Bragg reflectors reflecting light in different wavelength bands.

12. The light emitting diode of claim 10, wherein the distributed Bragg reflector comprises a first stack structure of stacked dielectric layers having a first thickness and a second stack structure of stacked dielectric layers having a second thickness.

13. The light emitting diode of claim 12, wherein the first thickness is smaller than ¼

th of a center wavelength of visible light.

14. The light emitting diode of claim 12, wherein the distributed Bragg reflector further includes a third stack structure in which a first number of dielectric layers having a thickness greater than ¼

th of a center wavelength of visible light and a second number of dielectric layers having a thickness smaller than ¼

th of the center wavelength of visible light, alternately stacked one above another.

15. The light emitting diode of claim 1, wherein the current spreading layer includes a conductive oxide doped with a metal dopant.

16. The light emitting diode of claim 1, wherein the current spreading layer includes a transparent conductive oxide doped with at least one of Ga, Al and In.

17. The light emitting diode of claim 1, wherein the upper current spreading layer and the lower current spreading layer have different indexes of refraction.

18. The light emitting diode of claim 1, wherein the lower current spreading layer comprises undoped indium tin oxide (no).

19. The light emitting diode of claim 1, wherein the upper current spreading layer has a higher transmittance and a lower sheet resistance than the lower current spreading layer.

20. The light emitting diode of claim 1, further including a heat dissipation pad disposed on the insulation layer and electrically insulated from the first electrode and the second electrode.