MAGNETIC MEMORY DEVICES INCLUDING IN-PLANE CURRENT LAYERS AND METHODS OF FABRICATING THE SAME
First Claim
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1. A magnetic memory device, comprising:
- a lower electrode;
a magnetic tunnel junction on the lower electrode; and
a capping electrode on the magnetic tunnel junction,wherein the magnetic tunnel junction comprises;
a reference magnetic pattern having a fixed magnetization direction;
a free magnetic pattern having a switchable magnetization direction;
a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern;
a sub oxide pattern on the free magnetic pattern; and
a metal pattern between the sub oxide pattern and the free magnetic pattern, andthe fixed and switchable magnetization directions are substantially perpendicular to top surfaces of the reference and free magnetic pattern defining the magnetic tunnel junction.
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Abstract
A magnetic memory device can include an upper electrode, a lower electrode and a Magnetic Tunnel Junction (MTJ). The MTJ can include a reference magnetic pattern configured to generate a fixed magnetization and a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization. A metal pattern can be on the free magnetic pattern and can be configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode.
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Citations
35 Claims
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1. A magnetic memory device, comprising:
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a lower electrode; a magnetic tunnel junction on the lower electrode; and a capping electrode on the magnetic tunnel junction, wherein the magnetic tunnel junction comprises; a reference magnetic pattern having a fixed magnetization direction; a free magnetic pattern having a switchable magnetization direction; a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern; a sub oxide pattern on the free magnetic pattern; and a metal pattern between the sub oxide pattern and the free magnetic pattern, and the fixed and switchable magnetization directions are substantially perpendicular to top surfaces of the reference and free magnetic pattern defining the magnetic tunnel junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9-12. -12. (canceled)
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13. A magnetic memory device, comprising:
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a magnetic tunnel junction; and a capping electrode on the magnetic tunnel junction, wherein the magnetic tunnel junction comprises a metal pattern adjacent to the capping electrode, and the capping electrode is asymmetrically disposed at a position that is offset from a center of the magnetic tunnel junction defined by an axis passing through upper and lower surfaces of the magnetic tunnel junction.
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14-24. -24. (canceled)
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25. A magnetic memory device, comprising:
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an upper electrode; a lower electrode; a Magnetic Tunnel Junction (MJT) including; a reference magnetic pattern configured to generate a fixed magnetization; a free magnetic pattern on the reference magnetic pattern configured to generate a switchable magnetization that switches direction between parallel and anti-parallel to the fixed magnetization; and a metal pattern on the free magnetic pattern configured to conduct an in-plane current and a perpendicular-to-plane to/from the upper electrode. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33, 34, 35)
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Specification