HYBRID PASSIVE DEVICE AND HYBRID MANUFACTURING METHOD

• US 20160182005A1
• Filed: 06/11/2015
• Published: 06/23/2016
• Est. Priority Date: 12/19/2014
• Status: Active Grant

• Current Assignee: MediaTek, Inc.
• Original Assignee: MediaTek, Inc.
• Inventors: LEE, Tao-Yi, TSENG, Po-Sen, TSAI, Ming-Da
• Granted Patent: US 9,691,540 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01F 27/2847 Sheets; Strips H01F27/2866 takes precedence
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 24/00 Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto

Abstract

A hybrid passive device for synergizing at least one passive component which resides in at least one technology is provided. The hybrid passive device includes a first passive component and a second passive component. The first passive component resides in a first technology of the at least one technology and/or a second technology of the at least one technology, the second technology is different from the first technology, and a technology boundary is arranged between the second technology and the first technology. The second passive component of the at least one passive component is different from the first passive component. The second passive component resides in the first technology and/or the second technology, and the first passive component and the second passive component are electromagnetically coupled to each other through the technology boundary.

Claims

1. A hybrid passive device for synergizing at least one passive component which resides in at least one technology, comprising:

a first passive component of the at least one passive component, wherein the first passive component resides in a first technology of the at least one technology and/or a second technology of the at least one technology, the second technology is different from the first technology, and a technology boundary is arranged between the second technology and the first technology; and

a second passive component of the at least one passive component which is different from the first passive component, wherein the second passive component resides in the first technology and/or the second technology, and the first passive component and the second passive component are electromagnetically coupled to each other through the technology boundary.

2. The hybrid passive device as claimed in claim 1, wherein when the first passive component and/or the second passive component reside in both the first technology and the second technology, the first passive component and/or the second passive component which reside in both the first technology and the second technology are divided into a first sub-component which resides in the first technology and a second sub-component which resides in the second technology, and the first sub-component is connected to the second sub-component through a conductive link.

3. The hybrid passive device as claimed in claim 2, wherein the conductive link is composed of conductive material for carrying conductive currents and interconnecting the first technology and the second technology.

4. The hybrid passive device as claimed in claim 3, wherein the conductive link comprises a via, a solder bump or a copper pillar.

5. The hybrid passive device as claimed in claim 1, wherein the first passive component and the second passive component comprise metal structures which are surrounded by dielectrics of the first technology and/or the second technology.

6. The hybrid passive device as claimed in claim 5, wherein the technology boundary is a plane for contacting the dielectrics of the first technology and/or the second technology.

7. The hybrid passive device as claimed in claim 1, wherein the first technology and the second technology comprise a substrate technology in which the first and second passive components reside and/or comprises a manufacturing process technology to be utilized by the first and second passive components.

8. The hybrid passive device as claimed in claim 7, wherein the substrate technology comprises a laminate substrate, an LGA substrate and/or a lead frame.

9. The hybrid passive device as claimed in claim 7, wherein the manufacturing process technology comprises an IPD manufacturing process, a CMOS manufacturing process, a compound semiconductor process and/or a package molding process.

10. The hybrid passive device as claimed in claim 1, wherein the electromagnetic coupling between the first passive component and the second passive component comprises an inductive coupling for sharing magnetic field lines and a capacitive coupling for sharing electrical field lines.

11. The hybrid passive device as claimed in claim 1, wherein the hybrid passive device is manufactured within a flip-chip package.

12. The hybrid passive device as claimed in claim 1, wherein the hybrid passive device is a balun device for the connective conversion between a single end and a differential end.

13. A hybrid manufacturing method for synergizing at least one passive component which resides in at least one technology, comprising:

determining a first technology and a second technology of the at least one technology and a technology boundary, wherein the second technology is different from the first technology, and a technology boundary is arranged between the second technology and the first technology;

arranging a first passive component of the at least one passive component which resides in the first technology and/or the second technology; and

arranging a second passive component of the at least one passive component which is different from the first passive component, wherein the second passive component resides in the first technology and/or the second technology, and the first passive component and the second passive component are electromagnetically coupled to each other through the technology boundary.

14. The hybrid manufacturing method as claimed in claim 13, further comprising when the first passive component and/or the second passive component reside in both the first technology and the second technology, dividing the first passive component and/or the second passive component which reside in both the first technology and the second technology into a first sub-component which resides in the first technology and a second sub-component which resides in the second technology, and connecting the first sub-component and the second sub-component through a conductive link.

15. The hybrid manufacturing method as claimed in claim 13, wherein the first passive component and the second passive component comprise metal structures which are surrounded by dielectrics of the first technology and/or the second technology.

16. The hybrid manufacturing method as claimed in claim 15, wherein the technology boundary is a plane for contacting the dielectrics of the first technology and/or the second technology.

17. The hybrid manufacturing method as claimed in claim 13, wherein the first technology and the second technology comprise a substrate technology in which the first and second passive components reside and/or comprises a manufacturing process technology to be utilized by the first and second passive components.

18. The hybrid manufacturing method as claimed in claim 17, wherein the substrate technology comprises a laminate substrate, an LGA substrate and/or a lead frame.

19. The hybrid manufacturing method as claimed in claim 17, wherein the manufacturing process technology comprises an IPD manufacturing process, a CMOS manufacturing process, a compound semiconductor process and/or a package molding process.

20. The hybrid manufacturing method as claimed in claim 13, wherein the electromagnetic coupling between the first passive component and the second passive component comprises an inductive coupling for sharing magnetic field lines and a capacitive coupling for sharing electrical field lines.

21. A hybrid manufacturing method for a hybrid passive device which synergizes a plurality of technology, comprising:

determining at least one requirement of the hybrid passive device;

determining the technologies according to the at least one requirement; and

arranging at least one passive component for the hybrid passive device which resides in the technologies according to the at least one requirement.

22. The hybrid manufacturing method as claimed in claim 21, further comprising arranging at least one technology boundary between every two of the technologies.

23. The hybrid manufacturing method as claimed in claim 21, wherein the at least one requirement comprises inductance, DC resistance, a turn ratio and/or a coupling factor.

24. The hybrid manufacturing method as claimed in claim 23, wherein the technologies comprise a substrate technology in which the at least one passive component resides and/or comprise a manufacturing process technology to be utilized by the at least one passive component.

25. The hybrid manufacturing method as claimed in claim 24, wherein the substrate technology comprises a laminate substrate, an LGA substrate and/or a lead frame, and the manufacturing process technology comprises an IPD process, a CMOS process, a compound semiconductor process and/or a package molding process.

26. The hybrid manufacturing method as claimed in claim 25, wherein the at least one passive component resides in or executes an integrated process such as the IPD process when the turn ratio is high, and the at least one passive component resides in or executes a layer-limited process such as the LGA substrate when the turn ratio is low.