SYSTEMS AND METHODS FOR HORIZONTAL INTEGRATION OF ACCELERATION SENSOR STRUCTURES

• US 20160185594A1
• Filed: 03/09/2016
• Published: 06/30/2016
• Est. Priority Date: 10/13/2014
• Status: Abandoned Application

• Current Assignee: Infineon Technologies Dresden GmbH (Infineon Technologies AG)
• Original Assignee: Infineon Technologies Dresden GmbH (Infineon Technologies AG)
• Inventors: Roeth, Andre, Kautzsch, Thoralf, Froehlich, Heiko, Vogt, Mirko, Stegemann, Maik, Bieselt, Steffen
• Application Number:
  US15/064,916
• Publication Number:
  US 20160185594A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2207/015 the micromechanical device and the control or processing electronics being integrated on the same substrate
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 1/00246 Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
• CPC Class Codes: B81C 2203/0764 Forming the micromechanical structure in a groove
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 29/84 controllable by variation of applied mechanical force, e.g. of pressure

Abstract

Embodiments relate to integrated circuit sensors, and more particularly to sensors integrated in an integrated circuit structure and methods for producing the sensors. In an embodiment, a sensor device comprises a substrate; a first trench in the substrate; a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.

Claims

1. A sensor device comprising:

a substrate;

a first trench in the substrate;

a first moveable element suspended in the first trench by a first plurality of support elements spaced apart from one another and arranged at a perimeter of the first moveable element; and

a first layer arranged on the substrate to seal the first trench, thereby providing a first cavity containing the first moveable element and the first plurality of support elements.

2. The sensor device of claim 1, wherein the first trench comprises a shallow-trench isolation element (STI).

3. The sensor device of claim 1, wherein the first layer comprises a functional layer.

4. The sensor device of claim 1, wherein the first plurality of support elements are arranged at at least two corners of the first moveable element.

5. The sensor device of claim 1, wherein the first plurality of support elements are arranged along at least two edges of the first moveable element.

6. The sensor device of claim 1, wherein the first moveable element has a thickness of about 300 nanometers.

7. The sensor of claim 1, wherein at least one of the first plurality of support elements has a lateral dimension less than about 10 micrometers (μ

m).

8. The sensor of claim 1, further comprising:

a second trench in the substrate;

a second moveable element suspended in the second trench by a second plurality of support elements spaced apart from one another and arranged at a perimeter of the second moveable element,

wherein the first layer seals the second trench, thereby providing a second cavity containing the second moveable element and the second plurality of support elements.