POSITION INDICATOR
First Claim
1. A capacitive-type pressure sensing semiconductor device comprising:
- a first electrode and a second electrode facing each other across a defined distance in between, wherein both of the first and second electrodes are formed by semiconductor processing and a capacitance formed between the first and second electrodes changes in response to displacement of the first electrode due to a pressure transmitted to the first electrode; and
a pressure transmitter disposed to transmit said pressure to the first electrode;
wherein the pressure transmitter is made of elastic material and disposed on the first electrode.
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Accused Products
Abstract
A position indicator includes a capacitor having a capacitance that changes in correspondence to a force applied to one end part of a housing. The capacitor is configured by a pressure detecting chip that includes a first electrode and a second electrode disposed opposite to the first electrode with a predetermined distance defined therebetween to have capacitance Cv formed between the first electrode and the second electrode. The capacitance Cv changes when the force applied to the one end part of the housing is transmitted to the first electrode to thereby change a relationship (e.g., the distance) between the two electrodes. A pressure transmitting member having predetermined elasticity is disposed on the first electrode such that the force applied to the one end part of the housing is transmitted to the first electrode of the semiconductor element via the pressure transmitting member.
28 Citations
22 Claims
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1. A capacitive-type pressure sensing semiconductor device comprising:
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a first electrode and a second electrode facing each other across a defined distance in between, wherein both of the first and second electrodes are formed by semiconductor processing and a capacitance formed between the first and second electrodes changes in response to displacement of the first electrode due to a pressure transmitted to the first electrode; and a pressure transmitter disposed to transmit said pressure to the first electrode; wherein the pressure transmitter is made of elastic material and disposed on the first electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A capacitive-type pressure sensing semiconductor device comprising:
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a first electrode and a second electrode facing each other across a defined distance in between, wherein both of the first and second electrodes are formed by semiconductor processing and a capacitance formed between the first and second electrodes changes in response to displacement of the first electrode due to a pressure transmitted to the first electrode; a first pressure transmitter disposed to transmit said pressure to the first electrode; and a package including;
i) a recess configured to house the first and second electrodes and to house the first pressure transmitter; and
ii) a step part that at least partially surrounds the recess, wherein the step part is configured to limit movement of the first pressure transmitter toward the first electrode in the direction of said defined distance when the first pressure transmitter is pressed to transmit said pressure to the first electrode. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification