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SEMICONDUCTOR DEVICE HAVING SOI SUBSTRATE

  • US 20160190203A1
  • Filed: 03/09/2016
  • Published: 06/30/2016
  • Est. Priority Date: 03/09/2010
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • an SOI substrate that includes a first surface and a second surface opposite to the first surface;

    a semiconductor layer that includes a third surface opposite to the first surface and a fourth surface opposite to the third surface, the fourth surface having a semiconductor element disposed thereon;

    an oxide film layer that is formed in contact with the first surface and the third surface;

    a first diffusion layer that is formed in a first region including the semiconductor layer in planar view, that is formed on a surface opposite to the third surface via the oxide film layer and that is connected to a reference potential;

    a second diffusion layer that is connected to the reference potential and that is formed in a part of a region of the first surface corresponding to a second region that is adjacent to the first region in planar view;

    a third diffusion layer that is formed in a part of a region of the first surface corresponding to the second region and that is formed separately from the second diffusion layer; and

    a voltage application unit that applies a voltage to the second surface and the third diffusion layer in order to deplete the SOI substrate.

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