METHOD OF FORMING HORIZONTAL GATE ALL AROUND STRUCTURE
First Claim
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1. A method of forming a semiconductor device, the method comprising:
- forming a plurality of fins on a substrate, each fin comprising a top channel layer, a bottom channel layer below the top channel layer, a top sacrificial layer between the top channel layer and the bottom channel layer, and a bottom sacrificial layer between the substrate and the bottom channel layer;
forming dielectric material between the fins;
etching the dielectric material to expose a portion of the fins above a level; and
removing the top sacrificial layer and the bottom sacrificial layer above the level.
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Abstract
This disclosure provides a horizontal structure by using a double STI recess method. The double STI recess method includes: forming a plurality of fins on the substrate; forming shallow trench isolation between the fins; performing first etch-back on the shallow trench isolation; forming source and drain regions adjacent to channels of the fins; and performing second etch-back on the shallow trench isolations to expose a lower portion of the fins as a larger process window for forming gates of the fins.
6 Citations
20 Claims
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1. A method of forming a semiconductor device, the method comprising:
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forming a plurality of fins on a substrate, each fin comprising a top channel layer, a bottom channel layer below the top channel layer, a top sacrificial layer between the top channel layer and the bottom channel layer, and a bottom sacrificial layer between the substrate and the bottom channel layer; forming dielectric material between the fins; etching the dielectric material to expose a portion of the fins above a level; and removing the top sacrificial layer and the bottom sacrificial layer above the level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a semiconductor device, the method comprising:
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forming a plurality of fins on a substrate, each fin comprising a top channel layer, a bottom channel layer below the top channel layer, a top sacrificial layer between the top channel layer and the bottom channel layer, and a bottom sacrificial layer between the substrate and the bottom channel layer; providing dielectric material between the fins; forming source and drain regions adjacent to the fins; etching back the dielectric material; removing a portion of the top sacrificial layer and the bottom sacrificial layer; and forming a gate around the top channel layer and the bottom channel layer. - View Dependent Claims (10, 11, 12)
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13. A method of forming a semiconductor device, the method comprising:
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forming a plurality of fins on a substrate, each fin comprising a top channel layer, a bottom channel layer below the top channel layer, a top sacrificial layer between the top channel layer and the bottom channel layer, and a bottom sacrificial layer between the substrate and the bottom channel layer; providing dielectric material between the fins; forming a poly layer over a preset portion of the fins; forming source and drain regions adjacent to the preset portion; removing the poly layer; etching back the dielectric material; removing a portion of the top sacrificial layer and the bottom sacrificial layer; and forming a gate around the top channel layer and the bottom channel layer. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20)
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Specification