SEMICONDUCTOR FILM, OXIDE MICROPARTICLE DISPERSION, METHOD FOR MANUFACTURING SEMICONDUCTOR FILM, AND THIN FILM TRANSISTOR

• US 20160190452A1
• Filed: 03/02/2016
• Published: 06/30/2016
• Est. Priority Date: 09/30/2013
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: ONO, Masashi, TANAKA, Atsushi, SUZUKI, Masayuki
• Granted Patent: US 10,333,084 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 10/464 Lateral top-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/484 characterised by the channel regions
• CPC Class Codes: H10K 71/12 using liquid deposition, e.g. spin coating
• CPC Class Codes: H10K 85/30 Coordination compounds
• CPC Class Codes: H10K 85/321 Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
• CPC Class Codes: H10K 85/361 Polynuclear complexes, i.e. complexes comprising two or more metal centers
• CPC Class Codes: H10K 85/381 Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc

Abstract

There is provided a semiconductor film, including: an aggregate of oxide microparticles including at least one type of metal selected from the group consisting of In, Zn, and Sn; and at least one type of a ligand which is selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below and which is coordinated with the oxide microparticles:

in which, in General Formula (A), each of X¹ and X² independently represents —SH, —NH₂, —OH, or —COOH, and each of A¹ and B¹ independently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, in which, in General Formula (B), each of X³ and X⁴ independently represents —SH, —NH₂, —OH, or —COOH and each of A² and B² independently represents a hydrogen atom or a substituent having an atomic number of 1 to 10, and in which, in General Formula (C), X⁵ represents —SH, —NH₂, or —OH, and A³ represents a hydrogen atom or a substituent having an atomic number of 1 to 10.

Claims

1. A semiconductor film, comprising:

an aggregate of oxide microparticles including at least one type of metal selected from the group consisting of In, Zn, and Sn; and

at least one type of a ligand which is selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below and which is coordinated with the oxide microparticles,

2. The semiconductor film according to claim 1,

wherein the oxide microparticles include at least In.

3. The semiconductor film according to claim 1,

wherein an average particle diameter of the oxide microparticles is 3 nm to 30 nm.

4. The semiconductor film according to claim 1,

wherein each of the A¹, the B¹, the A², the B², and the A³ represents a hydrogen atom.

5. The semiconductor film according to claim 1,

wherein each of the X² and the X⁴ represents —

SH or —

NH₂.

6. The semiconductor film according to claim 1,

wherein the at least one type of the ligand is selected from the group consisting of ethanedithiol, ethylenediamine, mercaptopropionic acid, glycolic acid, 2-aminoethanethiol, 2-aminoethanol, 3-amino-1-propanol, 3-mercapto-1-propanol, and thioglycolic acid, and derivatives of the ligands.

19. A thin film transistor comprising:

the semiconductor film according to claim 1.

7. An oxide microparticle dispersion liquid comprising:

oxide microparticles including at least one type of metal selected from the group consisting of In, Zn, and Sn;

at least one type of a ligand which is selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below and which is coordinated with the oxide microparticles; and

an organic solvent,

8. The oxide microparticle dispersion liquid according to claim 7,

wherein the oxide microparticles include at least In.

9. The oxide microparticle dispersion liquid according to claim 7,

wherein an average particle diameter of the oxide microparticles is 3 nm to 30 nm.

10. The oxide microparticle dispersion liquid according to claim 7,

wherein each of the A¹, the B¹, the A², the B², and the A³ represents a hydrogen atom.

11. The oxide microparticle dispersion liquid according to claim 7,

wherein each of the X² and the X⁴ represents —

SH or —

NH₂.

12. The oxide microparticle dispersion liquid according to claim 7,

wherein the at least one type of the ligand is selected from the group consisting of ethanedithiol, ethylenediamine, mercaptopropionic acid, glycolic acid, 2-aminoethanethiol, 2-aminoethanol, 3-amino-1-propanol, 3-mercapto-1-propanol, and thioglycolic acid, and derivatives of the ligands.

13. A method for manufacturing a semiconductor film, comprising:

an oxide microparticle aggregate forming step of applying an oxide microparticle dispersion liquid containing oxide microparticles including at least one type of metal which is selected from the group consisting of In, Zn, and Sn, a first ligand coordinated with the oxide microparticles, and a first solvent, to a substrate so as to form an aggregate of the oxide microparticles; and

a ligand exchanging step of applying a solution containing a second ligand which has a shorter molecular chain length than the first ligand and which is at least one type selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below, and a second solvent, to an aggregate of the oxide microparticles so as to exchange the first ligand coordinated with the oxide microparticles into the second ligand,

14. The method for manufacturing a semiconductor film according to claim 13,

wherein the oxide microparticles include at least In.

15. The method for manufacturing a semiconductor film according to claim 13,

wherein an average particle diameter of the oxide microparticles is 3 nm to 30 nm.

16. The method for manufacturing a semiconductor film according to claim 13,

wherein each of the A¹, the B¹, the A², the B², and the A³ represents a hydrogen atom.

17. The method for manufacturing a semiconductor film according to claim 13,

wherein each of the X² and the X⁴ represents —

SH or —

NH₂.

18. The method for manufacturing a semiconductor film according to claim 13,

wherein the at least one type of the ligand is selected from the group consisting of ethanedithiol, ethylenediamine, mercaptopropionic acid, glycolic acid, 2-aminoethanethiol, 2-aminoethanol, 3-amino-1-propanol, 3-mercapto-1-propanol, and thioglycolic acid, and derivatives of the ligands.