Semiconductor power module and power conversion apparatus using the same

• US 20160190915A1
• Filed: 12/23/2015
• Published: 06/30/2016
• Est. Priority Date: 12/24/2014
• Status: Active Grant

• Current Assignee: Hitachi Power Semiconductor Device, Ltd. (Minebea Mitsumi, Inc.)
• Original Assignee: Hitachi Power Semiconductor Device, Ltd. (Minebea Mitsumi, Inc.)
• Inventors: KAWASE, Daisuke, INABA, Masamitsu, SAITO, Katsuaki, HORIUCHI, Keisuke
• Granted Patent: US 10,374,414 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 23/053 the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
• CPC Class Codes: H01L 23/49844 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/645 Inductive arrangements H01L23/647, H01L23/66 take precedence
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 29/7393 Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H02H 7/122 for inverters, i.e. dc/ac converters
• CPC Class Codes: H02M 1/0038 Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
• CPC Class Codes: H02M 7/003 Constructional details, e.g. physical layout, assembly, wiring or busbar connections
• CPC Class Codes: H02M 7/5387 in a bridge configuration

Abstract

A semiconductor power module with which it is possible to suppress the influence of noise given from a main terminal to a control terminal is provided. At least any one of main terminals (positive electrode terminal, negative electrode terminal, alternating current terminal) is so configured that the main terminal includes two parts extended in a common direction. The two parts are, for example, formed of a single component having such as a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module or two different components. The two parts are so structured that the parts are extended in a common direction. Control terminals (gate signal terminal and emitter signal terminal) are so arranged that a laminated portion of the control terminals is sandwiched between one and the other of the two parts to configure the semiconductor power module.

Claims

1. A semiconductor power module comprising:

a positive electrode terminal;

a negative electrode terminal;

an alternating current terminal;

an emitter signal terminal; and

a gate signal terminal,

wherein at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal includes two parts extended in a common direction,

wherein the emitter signal terminal and the gate signal terminal include a laminated portion formed by laminating respective parts on the emitter signal terminal and the gate signal terminal together, and

wherein the laminated portion is so placed as to be sandwiched between the two parts of at least any one of the positive electrode terminal, the negative electrode terminal, and the alternating current terminal.

2. The semiconductor power module according to claim 1,

wherein the two parts are respectively formed of two different components.

3. The semiconductor power module according to claim 2,

wherein the alternating current terminal is placed on a surface opposite a surface where the positive electrode terminal and the negative electrode terminal are placed.

4. The semiconductor power module according to claim 3,

wherein a control terminal is placed between an area where the positive electrode terminal and the negative electrode terminal are placed and an area where the alternating current terminal is placed.

5. The semiconductor power module according to claim 3, further comprising:

a base on which the positive electrode terminal, the negative electrode terminal, the alternating current terminal, the emitter signal terminal, and the gate signal terminal are mounted in common,

wherein the base, the gate signal wiring, and the emitter signal wiring are so arranged that the direction of the plane of the base and a loop of the gate signal wiring and the emitter signal wiring laminated together are orthogonal to each other.

6. The semiconductor power module according to claim 3,

wherein an insulator is placed in at least either of between the positive electrode terminal and the negative electrode terminal laminated together and between the emitter signal wiring and the gate signal wiring.

7. The semiconductor power module according to claim 1,

wherein the two parts are formed of one and the other of the bifurcation of a single component having such a shape that the component is bifurcated from the outside toward the inside of the semiconductor power module.

8. The semiconductor power module according to claim 7,

wherein the alternating current terminal is placed on a surface opposite a surface where the positive electrode terminal and the negative electrode terminal are placed.

9. The semiconductor power module according to claim 8,

wherein a control terminal is placed between an area where the positive electrode terminal and the negative electrode terminal are placed and an area where the alternating current terminal is placed.

10. The semiconductor power module according to claim 8,

wherein the semiconductor power module is so configured that a base can be mounted, and

wherein the gate signal wiring and the emitter signal wiring are so arranged that when the base is mounted, the direction of the plane of the base and a loop of the gate signal wiring and the emitter signal wiring laminated together are orthogonal to each other.

11. The semiconductor power module according to claim 8,

wherein an insulator is placed in at least either of between the positive electrode terminal and the negative electrode terminal laminated together and between the emitter signal wiring and the gate signal wiring.

12. A power conversion apparatus formed by arranging semiconductor power modules having a substantially rectangular shape in parallel in the direction of the short sides of the rectangle,

wherein the semiconductor power modules are semiconductor power modules according to claim 11.

13. The power conversion apparatus according to claim 12,

wherein a capacitor module is placed on the positive electrode terminal side or the negative electrode terminal side of the semiconductor power modules, and

wherein a gate wiring circuit board is provided directly over the semiconductor power modules.