ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE
First Claim
1. An array substrate, comprising a substrate and a first thin film (TFT) and a first electrode formed on the substrate, the first TFT including a gate electrode, an active layer, a source electrode and a drain electrode,wherein the first electrode is electrically connected with the drain electrode of the first TFT, at least covers an area of the active layer of the first TFT, which area is not overlapped with the source electrode and the drain electrode, and is capable of absorbing ultraviolet (UV) light.
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Accused Products
Abstract
An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate includes a substrate (10) and first thin-film transistors (TFTs) (21) and first electrodes (40) formed on the substrate (10). The first TFT (21) includes a gate electrode (200), an active layer (202), a source electrode (205) and a drain electrode (204). The first electrode (40) is electrically connected with the drain electrode (204) of the first TFT (21), at least covers an area of the active layer (202) of the first TFT, not overlapped with the source electrode (205) and the drain electrode (204), and can absorb ultraviolet (UV) light. The array substrate can solve the problem of reducing the display performance of the display device as the performances degrade and even fail due to UV irradiation of the TFTs.
16 Citations
21 Claims
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1. An array substrate, comprising a substrate and a first thin film (TFT) and a first electrode formed on the substrate, the first TFT including a gate electrode, an active layer, a source electrode and a drain electrode,
wherein the first electrode is electrically connected with the drain electrode of the first TFT, at least covers an area of the active layer of the first TFT, which area is not overlapped with the source electrode and the drain electrode, and is capable of absorbing ultraviolet (UV) light.
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12. A method for manufacturing an array substrate, comprising:
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forming a first thin film transistor (TFT) on a substrate, including forming a gate electrode, an active layer, a source electrode and a drain electrode; and forming a first electrode on the substrate provided with the first TFT, in which the first electrode is electrically connected with the drain electrode of the first TFT, at least covers an area of the active layer of the first TFT, which area is not overlapped with the source electrode and the drain electrode, and is capable of absorbing ultraviolet (UV) light. - View Dependent Claims (13, 15, 16, 17, 18, 19, 20, 21)
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14. (canceled)
Specification