METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• US 20160204000A1
• Filed: 07/08/2014
• Published: 07/14/2016
• Est. Priority Date: 08/21/2013
• Status: Active Grant

• Current Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Original Assignee: Sumitomo Electric Industries Limited (Sumitomo Corporation)
• Inventors: Kubota, Ryosuke, Tanaka, So
• Granted Patent: US 9,887,101 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/02529 Silicon carbide
• CPC Class Codes: H01L 21/0415 using ion implantation
• CPC Class Codes: H01L 21/046 using ion implantation
• CPC Class Codes: H01L 21/2253 by ion implantation
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/26546 of electrically active species
• CPC Class Codes: H01L 21/324 Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering H01L21/20 - H01L21/288 and H01L21/302 - H01L21/322 take precedence
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/6831 using electrostatic chucks
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks

Abstract

A method for manufacturing a semiconductor device in accordance with the present invention includes the steps of preparing a semiconductor substrate, placing the semiconductor substrate on an electrostatic chuck, chucking the semiconductor substrate after raising a temperature of the electrostatic chuck to a first temperature, raising a temperature of the electrostatic chuck to a second temperature which is higher than the above-described first temperature in a state where the semiconductor substrate is chucked, and performing a treatment to the semiconductor substrate in a state where a temperature of the electrostatic chuck is maintained at the above-described second temperature.

Claims

1. A method for manufacturing a semiconductor device comprising the steps of:

preparing a semiconductor substrate;

placing the semiconductor substrate on an electrostatic chuck;

chucking the semiconductor substrate after raising a temperature of the electrostatic chuck to a first temperature;

raising a temperature of the electrostatic chuck to a second temperature which is higher than the first temperature in a state where the semiconductor substrate is chucked; and

performing a treatment to the semiconductor substrate in a state where a temperature of the electrostatic chuck is maintained at the second temperature.

2. The method for manufacturing a semiconductor device according to claim 1, wherein in the step of raising a temperature to the second temperature, raising a temperature of the electrostatic chuck is started after a temperature of the semiconductor substrate is raised to the first temperature.

3. The method for manufacturing a semiconductor device according to claim 1, wherein

the electrostatic chuck includes an electrode configured to generate an electrostatic adsorption force with respect to the semiconductor substrate in accordance with an applied voltage, and

in the step of chucking the semiconductor substrate, a first voltage is applied to the electrode, and

in the step of raising a temperature to the second temperature, the applied voltage to the electrode is increased to a second voltage which is higher than the first voltage.

4. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of:

after the step of performing a treatment to the semiconductor substrate, releasing chucking of the semiconductor substrate after lowering a temperature of the electrostatic chuck to the first temperature.

5. The method for manufacturing a semiconductor device according to claim 1, further comprising the step of:

after the step of performing a treatment to a semiconductor substrate, releasing chucking of the semiconductor substrate after lowering a temperature of the electrostatic chuck to a third temperature which is lower than or equal to the second temperature and higher than or equal to the first temperature.

6. The method for manufacturing a semiconductor device according to claim 1, wherein the first temperature is set to be within a range of a substrate temperature in which an amount of warpage of the semiconductor substrate is smaller than or equal to an acceptable value at which the electrostatic chuck can chuck the semiconductor substrate.

7. The method for manufacturing a semiconductor device according to claim 6, wherein the first temperature is set to be within a temperature range in which a rate of change in an electrostatic capacity of the electrostatic chuck before and after the step of chucking the semiconductor substrate becomes less than or equal to a threshold value.

8. The method for manufacturing a semiconductor device according to claim 6, wherein the first temperature is set to be within a temperature range in which an amount of change in a temperature of the semiconductor substrate before and after the step of chucking the semiconductor substrate becomes greater than or equal to a threshold value.

9. The method for manufacturing a semiconductor device according to claim 1, wherein

the step of performing a treatment to a semiconductor substrate includes the step of implanting impurity ion to the semiconductor substrate, and

the second temperature is set to be within a temperature range of higher than or equal to 100°

C. and lower than or equal to 800°

C., and

the first temperature is set to be within a temperature range of higher than or equal to a room temperature and lower than or equal to 700°

C.

10. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate is a compound semiconductor substrate having an outer diameter which is larger than 100 mm.

11. The method for manufacturing a semiconductor device according to claim 10, wherein the semiconductor substrate is a silicon carbide semiconductor substrate having an outer diameter which is larger than 100 mm.