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THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

  • US 20160204139A1
  • Filed: 05/27/2014
  • Published: 07/14/2016
  • Est. Priority Date: 09/30/2013
  • Status: Abandoned Application
First Claim
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1. A thin film transistor substrate comprising:

  • a substrate;

    a gate electrode and a first electrode of a capacitor formed above the substrate, the gate electrode and the first electrode being arranged along a plane of the substrate;

    a gate insulating film formed on the gate electrode;

    a semiconductor layer formed on the gate insulating film;

    an insulating layer formed on the semiconductor layer and above the first electrode, the insulating layer leaving portions of the semiconductor layer exposed;

    a source electrode and a drain electrode formed above the insulating layer, the source electrode and the drain electrode being connected to the semiconductor layer at the exposed portions of the semiconductor layer; and

    a second electrode of the capacitor formed above the insulating layer, at a position opposite the first electrode,wherein the insulating layer above the gate electrode is thicker than the insulating layer above the first electrode.

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