THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME

• US 20160204139A1
• Filed: 05/27/2014
• Published: 07/14/2016
• Est. Priority Date: 09/30/2013
• Status: Abandoned Application

• Current Assignee: JOLED Inc.
• Original Assignee: JOLED Inc.
• Inventors: KISHIDA, Yuji, KAWASHIMA, Takahiro, NAKAZAKI, Yoshiaki
• Application Number:
  US14/917,076
• Publication Number:
  US 20160204139A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1248 with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous

Abstract

A thin film transistor substrate includes: a gate electrode and a first electrode of a capacitor formed above a substrate so as to be arranged along a plane of the substrate; a gate insulating film formed on the gate electrode; a semiconductor layer formed on the gate insulating film; an insulating layer formed on the semiconductor layer and above the first electrode so as to expose portions of the semiconductor layer; a source electrode and a drain electrode formed above the insulating layer so as to be connected to the semiconductor layer at the exposed portions of the semiconductor layer; and a second electrode of the capacitor formed above the insulating layer, at a position opposite the first electrode, and the insulating layer above the gate electrode is thicker than the insulating layer above the first electrode.

Claims

1. A thin film transistor substrate comprising:

a substrate;

a gate electrode and a first electrode of a capacitor formed above the substrate, the gate electrode and the first electrode being arranged along a plane of the substrate;

a gate insulating film formed on the gate electrode;

a semiconductor layer formed on the gate insulating film;

an insulating layer formed on the semiconductor layer and above the first electrode, the insulating layer leaving portions of the semiconductor layer exposed;

a source electrode and a drain electrode formed above the insulating layer, the source electrode and the drain electrode being connected to the semiconductor layer at the exposed portions of the semiconductor layer; and

a second electrode of the capacitor formed above the insulating layer, at a position opposite the first electrode,

wherein the insulating layer above the gate electrode is thicker than the insulating layer above the first electrode.

2. The thin film transistor substrate according to claim 1,

wherein the insulating layer above the gate electrode includes:

a first layer; and

a second layer formed on the first layer, and

the insulating layer above the first electrode includes only the second layer among the first layer and the second layer.

3. The thin film transistor substrate according to claim 1, further comprising:

a first line formed between the substrate and the insulating layer, the first line being arranged along the plane of the substrate together with the gate electrode and the first electrode; and

a second line formed above the insulating layer, at a position opposite the first line,

wherein the insulating layer between the first line and the second line is thicker than the insulating layer above the first electrode.

4. The thin film transistor substrate according to claim 3,

wherein each of the insulating layer on the semiconductor layer and the insulating layer between the first line and the second line includes:

a first layer; and

a second layer formed on the first layer, and

the insulating layer above the first electrode includes only the second layer among the first layer and the second layer.

5. The thin film transistor substrate according to claim 3,

wherein the gate electrode, the first electrode, and the first line are formed on the substrate,

the gate insulating film is formed on the gate electrode, the first electrode, and the first line, and

the semiconductor layer is formed on the gate insulating film and above only the gate electrode and the first line among the gate electrode, the first electrode, and the first line.

6. The thin film transistor substrate according to claim 1,

wherein the semiconductor layer is an oxide semiconductor layer.

7. The thin film transistor substrate according to claim 6,

wherein the oxide semiconductor layer is a transparent amorphous oxide semiconductor.

8. A method for manufacturing a thin film transistor substrate, the method comprising:

(i) forming a gate electrode and a first electrode of a capacitor above a substrate, the gate electrode and the first electrode being arranged along a plane of the substrate;

(ii) forming a gate insulating film, a semiconductor layer, and an insulating layer in sequence by continuously stacking a first insulating film, a semiconductor film, and a second insulating film in sequence, on the gate electrode and the first electrode; and

(iii) exposing portions of the semiconductor layer, forming a source electrode and a drain electrode above the insulating layer, and forming a second electrode of the capacitor above the first electrode and the insulating layer, the source electrode and the drain electrode being connected to the semiconductor layer at the exposed portions,

wherein in step (ii), at least a portion of the second insulating film above the first electrode is removed to make the insulating layer above the gate electrode thicker than the insulating layer above the first electrode.

9. The method for manufacturing a thin film transistor substrate according to claim 8,

wherein in step (ii),

the gate insulating film originating from the first insulating film is formed by continuously stacking the first insulating film, the semiconductor film, and the second insulating film in sequence, on the gate electrode and the first electrode,

the semiconductor layer is formed by removing the semiconductor film and the second insulating film above the first electrode, and

the insulating layer which includes the second insulating film and a third insulating film is formed by forming the third insulating film above the gate electrode and the first electrode.

10. The method for manufacturing a thin film transistor substrate according to claim 8,

wherein step (i) further includes forming a first line above the substrate, the first line being arranged along the plane of the substrate together with the gate electrode and the first electrode,

in step (ii), the gate insulating film, the semiconductor layer, and the insulating layer are formed in sequence by continuously stacking the first insulating film, the semiconductor film, and the second insulating film in sequence, on the gate electrode, the first electrode, and the first line,

step (iii) further includes forming a second line above the first line and the insulating layer, and

in step (ii), at least a portion of the second insulating film above the first electrode is removed to make the insulating layer above the gate electrode and the insulating layer between the first line and the second line thicker than the insulating layer above the first electrode.

11. The method for manufacturing a thin film transistor substrate according to claim 10,

wherein in step (ii),

the gate insulating film originating from the first insulating film is formed by continuously stacking the first insulating film, the semiconductor film, and the second insulating film in sequence, on the gate electrode, the first electrode, and the first line,

the semiconductor layer is formed by removing the semiconductor film and the second insulating film above the first electrode, and

the insulating layer which includes the second insulating film and a third insulating film is formed by forming the third insulating film above the gate electrode, the first electrode, and the first line.

12. The method for manufacturing a thin film transistor substrate according to claim 8,

wherein the semiconductor layer is an oxide semiconductor layer.

13. The method for manufacturing a thin film transistor substrate according to claim 12,

wherein the oxide semiconductor layer is a transparent amorphous oxide semiconductor.