IMAGE SENSOR
First Claim
1. An image sensor comprising:
- a semiconductor layer having a first surface and a second surface that are opposite to each other;
a photosensitive device in the semiconductor layer near the first surface and that is configured to accumulate charges based on light incident at the second surface;
a charge storage device in the semiconductor layer near the first surface and that is configured to temporarily store charges accumulated by the photosensitive device;
a first transmission transistor configured to transmit charges accumulated by the photosensitive device to the charge storage device and that includes a first gate on the first surface of the semiconductor layer; and
a leakage photogenerated charge drain region in the semiconductor layer near the second surface, apart from the charge storage device, and above the charge storage device.
1 Assignment
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Accused Products
Abstract
Example embodiments relate to an image sensor supporting a global shutter for minimizing image distortion. An example image sensor includes a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device, which is formed in the semiconductor layer near the first surface and accumulates charges based on light incident via the second surface; a charge storage device, which is formed in the semiconductor layer near the first surface and temporarily stores charges accumulated by the photosensitive device; a first transmission transistor, which transmits charges accumulated by the photosensitive device to the charge storage device and includes a first gate formed on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region, which is formed in the semiconductor layer near the second surface, is apart from the charge storage device, and is arranged above the charge storage device.
53 Citations
35 Claims
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1. An image sensor comprising:
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a semiconductor layer having a first surface and a second surface that are opposite to each other; a photosensitive device in the semiconductor layer near the first surface and that is configured to accumulate charges based on light incident at the second surface; a charge storage device in the semiconductor layer near the first surface and that is configured to temporarily store charges accumulated by the photosensitive device; a first transmission transistor configured to transmit charges accumulated by the photosensitive device to the charge storage device and that includes a first gate on the first surface of the semiconductor layer; and a leakage photogenerated charge drain region in the semiconductor layer near the second surface, apart from the charge storage device, and above the charge storage device. - View Dependent Claims (2, 3, 7, 8, 9, 13)
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4-6. -6. (canceled)
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10-12. -12. (canceled)
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14. (canceled)
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15. An image sensor comprising:
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a semiconductor layer having a first surface and a second surface that are opposite to each other; and a plurality of unit pixels, wherein one or more of the plurality of unit pixels includes; a photosensitive device in the semiconductor layer near the first surface and configured to accumulate charges based on light incident via the second surface; a charge storage device in the semiconductor layer near the first surface and that is configured to store charges accumulated by the photosensitive device; a first transmission transistor configured to transmit charges accumulated by the photosensitive device to the charge storage device and includes a first gate on the first surface of the semiconductor layer; a leakage photogenerated charge drain region in the semiconductor layer near the second surface, that is apart from the charge storage device, and that is above the charge storage device; and a blocking layer on the second surface of the semiconductor layer, that is configured to block light travelling to the charge storage device, and is electrically connected to the leakage photogenerated charge drain region. - View Dependent Claims (16, 17, 18, 19, 20, 23, 27)
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21-22. -22. (canceled)
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24-26. -26. (canceled)
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28-30. -30. (canceled)
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31. An image sensor comprising:
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one or more unit pixels in a semiconductor layer, the one or more pixels including; a photosensitive device configured to accumulate charges generated via light incident on the semiconductor layer; a charge storage device configured to store charges accumulated by the photosensitive device; and a leakage photogenerated charge drain region configured to discharge photogenerated charges outside the semiconductor layer. - View Dependent Claims (32, 33, 34, 35)
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Specification