SOLID-STATE IMAGING DEVICE AND ELECTRONIC APPARATUS

• US 20160204156A1
• Filed: 08/07/2014
• Published: 07/14/2016
• Est. Priority Date: 08/19/2013
• Status: Active Grant

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: TOGASHI, Hideaki
• Granted Patent: US 9,698,188 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/7682 the dielectric comprising air gaps
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/14643 Photodiode arrays; MOS imagers
• CPC Class Codes: H01L 27/14647 Multicolour imagers having a stacked pixel-element structure, e.g. npn, npnpn or MQW elements
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/77 Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
• CPC Class Codes: H04N 25/79 Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors

Abstract

There is provided a solid-state imaging device including: one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate; a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate, in which the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

Claims

1. A solid-state imaging device comprising:

one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate;

a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and

an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate,

wherein the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

2. The solid-state imaging device according to claim 1, further comprising a reset transistor provided on the second surface of the semiconductor substrate, the reset transistor including a reset gate,

wherein the reset gate is disposed adjacent to the floating diffusion.

3. The solid-state imaging device according to claim 1, wherein

the one or more photoelectric conversion elements include a plurality of photoelectric conversion elements, and

the through electrode is provided for each of the plurality of photoelectric conversion elements.

4. The solid-state imaging device according to claim 1, wherein the through electrode penetrates the semiconductor substrate and is separated from the semiconductor substrate by a separation groove.

5. The solid-state imaging device according to claim 4, wherein

the through electrode is made of a semiconductor doped with an N-type or P-type impurity, and

an impurity region of a same conductive type as a conductive type of the through electrode is provided on an outer side surface of the separation groove in the semiconductor substrate.

6. The solid-state imaging device according to claim 4, wherein the through electrode is made of a metal or a conductive material.

7. The solid-state imaging device according to claim 4, wherein the separation groove is filled with a dielectric layer having insulation properties.

8. The solid-state imaging device according to claim 4, wherein

an outer side surface of the separation groove is covered with an outer dielectric layer,

an inner side surface of the separation groove is covered with an inner dielectric layer, and

the outer dielectric layer and the inner dielectric layer are spaced with a gap between.

9. The solid-state imaging device according to claim 4, wherein a film having a fixed charge is provided on an outer side surface, an inner side surface, and a bottom surface of the separation groove, and the first surface of the semiconductor substrate.

10. The solid-state imaging device according to claim 1, further comprising one or more photodiodes provided in the semiconductor substrate.

11. A solid-state imaging device comprising:

a photoelectric conversion element provided on side of a first surface of a semiconductor substrate;

a through electrode coupled to the photoelectric conversion element, and provided between the first surface and a second surface of the semiconductor substrate;

a separation groove provided between the through electrode and the semiconductor substrate; and

a dielectric layer embedded in the separation groove, and having insulation properties.

12. A solid-state imaging device comprising:

a photoelectric conversion element provided on side of a first surface of a semiconductor substrate;

a through electrode coupled to the photoelectric conversion element, and provided between the first surface and a second surface of the semiconductor substrate;

a separation groove provided between the through electrode and the semiconductor substrate;

an outer dielectric layer covering an outer side surface of the separation groove;

an inner dielectric layer covering an inner side surface of the separation groove; and

a gap provided between the outer dielectric layer and the inner dielectric layer.

13. An electronic apparatus provided with a solid-state imaging device, the solid-state imaging device comprising:

one or more photoelectric conversion elements provided on side of a first surface of a semiconductor substrate;

a through electrode coupled to the one or more photoelectric conversion elements, and provided between the first surface and a second surface of the semiconductor substrate; and

an amplifier transistor and a floating diffusion provided on the second surface of the semiconductor substrate,

wherein the one or more photoelectric conversion elements are coupled to a gate of the amplifier transistor and the floating diffusion via the through electrode.

14. An electronic apparatus provided with a solid-state imaging device, the solid-state imaging device comprising:

a photoelectric conversion element provided on side of a first surface of a semiconductor substrate;

a through electrode coupled to the photoelectric conversion element, and provided between the first surface and a second surface of the semiconductor substrate;

a separation groove provided between the through electrode and the semiconductor substrate; and

a dielectric layer embedded in the separation groove, and having insulation properties.

15. An electronic apparatus provided with a solid-state imaging device, the solid-state imaging device comprising:

a photoelectric conversion element provided on side of a first surface of a semiconductor substrate;

a through electrode coupled to the photoelectric conversion element, and provided between the first surface and a second surface of the semiconductor substrate;

a separation groove provided between the through electrode and the semiconductor substrate;

an outer dielectric layer covering an outer side surface of the separation groove;

an inner dielectric layer covering an inner side surface of the separation groove; and

a gap provided between the outer dielectric layer and the inner dielectric layer.