METHOD OF MANUFACTURING OXIDE THIN FILM TRANSISTOR
First Claim
1. A method of manufacturing an oxide thin film transistor (TFT), the method comprising:
- forming a gate electrode on a substrate;
forming a gate insulating layer on the gate electrode;
forming an oxide semiconductor layer including a channel layer on the gate insulating layer;
forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer;
first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere;
secondly plasma processing the substrate at a nitrogen oxide atmosphere; and
sequentially forming a first protective layer and a second protective layer on the substrate.
1 Assignment
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Accused Products
Abstract
There is provided a method of manufacturing an oxide thin film transistor (TFT). The method includes forming a gate electrode on a substrate, forming a gale insulating layer on the gate electrode, forming an oxide semiconductor layer including a channel layer on the gate insulating layer, forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer, first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere, secondly plasma processing the substrate al a nitrogen oxide atmosphere, and sequentially forming a first protective layer and a second protective layer on the substrate.
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Citations
16 Claims
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1. A method of manufacturing an oxide thin film transistor (TFT), the method comprising:
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forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an oxide semiconductor layer including a channel layer on the gate insulating layer; forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer; first plasma processing the substrate on which the source electrode and the drain electrode are formed at a carbon (C) atmosphere; secondly plasma processing the substrate at a nitrogen oxide atmosphere; and sequentially forming a first protective layer and a second protective layer on the substrate. - View Dependent Claims (2, 3, 4, 5)
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6. A method of manufacturing an oxide thin film transistor (TFT), the method comprising:
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forming a gale electrode on a substrate; forming a gate insulating layer on the gate electrode; forming an oxide semiconductor layer including a channel layer on the gate insulating layer; forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer; first plasma processing the substrate on which the source electrode and the dram electrode are formed at a nitrogen oxide atmosphere; secondly plasma processing the substrate at a carbon (C) atmosphere; and sequentially forming a first protective layer and a second protective layer on the substrate. - View Dependent Claims (7, 8, 9, 10)
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11. A method of manufacturing an oxide thin film transistor (TFT), the method comprising:
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forming a gate electrode on a substrate; forming a first insulating layer on the gate electrode; forming an oxide semiconductor layer including a channel layer on the first insulating layer; forming a source electrode and a drain electrode separated from each other on the oxide semiconductor layer; forming a second insulating layer on the source electrode and the drain electrode; and sequentially forming a first protective layer and a second protective layer on the substrate. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification