HIGH EFFICIENCY LEDS AND METHODS OF MANUFACTURING
First Claim
1. A light emitting diode (LED) chip, comprising:
- an active LED structure comprising an active region between two oppositely doped layers, and said active region emitting light in response to an electrical signal applied to said oppositely doped layer;
a first reflective layer adjacent one of said oppositely doped layers;
a second reflective layer on said first reflective layer, said second reflective layer reflecting light not reflected by said first reflective layer, wherein at least one of said first and said second reflective layers extend beyond the edge of said active LED structure.
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Accused Products
Abstract
Simplified LED chip architectures or chip builds are disclosed that can result in simpler manufacturing processes using fewer steps. The LED structure can have fewer layers than conventional LED chips with the layers arranged in different ways for efficient fabrication and operation. The LED chips can comprise an active LED structure. A dielectric reflective layer is included adjacent to one of the oppositely doped layers. A metal reflective layer is on the dielectric reflective layer, wherein the dielectric and metal reflective layers extend beyond the edge of said active region. By extending the dielectric layer, the LED chips can emit with more efficiency by reflecting more LED light to emit in the desired direction. By extending the metal reflective layer beyond the edge of the active region, the metal reflective layer can serve as a current spreading layer and barrier, in addition to reflecting LED light to emit in the desired direction. The LED chips can also comprise self-aligned and self-limiting features that simplify etching processes during fabrication.
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Citations
59 Claims
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1. A light emitting diode (LED) chip, comprising:
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an active LED structure comprising an active region between two oppositely doped layers, and said active region emitting light in response to an electrical signal applied to said oppositely doped layer; a first reflective layer adjacent one of said oppositely doped layers; a second reflective layer on said first reflective layer, said second reflective layer reflecting light not reflected by said first reflective layer, wherein at least one of said first and said second reflective layers extend beyond the edge of said active LED structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21. A light emitting diode (LED) chip, comprising:
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an active LED structure comprising an active region between two oppositely doped layers, and said active region emitting light in response to an electrical signal applied to said oppositely doped layer; a dielectric reflective layer on one of said oppositely doped layers and extending beyond the edge of said active region; a metal reflective layer on said first dielectric reflective layer. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31)
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32. A method for forming LED chips, comprising:
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depositing active structure epitaxial layers on a wafer; etching different portions of said active structure in a single etch step, wherein said different portions etch at different rates and wherein at least one of said portions is self-limiting to said etch.
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- 33. The method of claim 33, wherein said self-limiting portions comprise textured features on said active structure.
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37. The method of claim 37, further comprising a single etch step to form a self-aligned via hole through said reflective layers to said active structure.
- 39. The method of claim 39, further comprising forming a contact on one of said reflective layers.
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41. A method for forming LED chips, comprising:
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forming an active structure of epitaxial layers; forming a plurality of reflective layers on said active structure; performing a single etch step to form a self-aligned via hole through said reflective layers to said active structure.
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42. A light emitting diode (LED) chip, comprising:
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an active LED structure; a first reflective layer adjacent said active layer; a second reflective layer on said first reflective layer, said second reflective layer reflecting light not reflected by said first reflective layer, wherein said first reflective layer extends beyond the active region on a portion of the LED chip. - View Dependent Claims (43, 44, 45, 46, 47)
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48. A light emitting diode (LED) chip, comprising:
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an active LED structure; a plurality of layers on the backside of said active structure; a via hole on the backside of and into said active LED structure, wherein at least two of said plurality of layers are self-aligned at said via hole. - View Dependent Claims (49, 50, 51, 52)
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53. A light emitting diode (LED) chip, comprising:
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an active LED structure; a plurality of layers on the backside of said active structure; wherein one or more of said plurality of layers self-aligned at more than one location on the backside of said active structure. - View Dependent Claims (54, 55, 56, 57, 58, 59)
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Specification