Semiconductor Device with Surge Current Protection
First Claim
Patent Images
1. A power device, comprising:
- a semiconductor substrate comprising a plurality of switchable cells defining an active area of the power device, each of the switchable cells comprising an emitter region, and a collector region;
an emitter metallization in ohmic contact with the emitter region of the switchable cells; and
a collector metallization in ohmic contact with the collector region of the switchable cells;
wherein the active area comprises first switchable regions and second switchable regions different to the first switchable region, each of the first and second switchable regions comprising at least a portion of one or more of the switchable cells;
wherein the first switchable regions have a first threshold in the range of 5 V to 10 V defining a device threshold at which the power device becomes conductive for continuously conducting a rated current of the power device between the emitter metallization and the collector metallization; and
wherein the second switchable regions have a second threshold in the range of 15 V to 25 V defining a surge threshold of the power device at which the power device becomes operable to conduct a surge current between the emitter metallization and the collector metallization, wherein the surge current of the power device is at least five times as large as the rated current of the power device.
1 Assignment
0 Petitions
Accused Products
Abstract
A power device includes an active area having at least two switchable regions with different threshold voltages.
2 Citations
22 Claims
-
1. A power device, comprising:
-
a semiconductor substrate comprising a plurality of switchable cells defining an active area of the power device, each of the switchable cells comprising an emitter region, and a collector region; an emitter metallization in ohmic contact with the emitter region of the switchable cells; and a collector metallization in ohmic contact with the collector region of the switchable cells; wherein the active area comprises first switchable regions and second switchable regions different to the first switchable region, each of the first and second switchable regions comprising at least a portion of one or more of the switchable cells; wherein the first switchable regions have a first threshold in the range of 5 V to 10 V defining a device threshold at which the power device becomes conductive for continuously conducting a rated current of the power device between the emitter metallization and the collector metallization; and wherein the second switchable regions have a second threshold in the range of 15 V to 25 V defining a surge threshold of the power device at which the power device becomes operable to conduct a surge current between the emitter metallization and the collector metallization, wherein the surge current of the power device is at least five times as large as the rated current of the power device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 19, 20, 21, 22)
-
-
17. A power inverter, comprising:
-
a bridge circuit comprising a first half-bridge comprising a high-side power device connected between a first node and a high-side node of an intermediate circuit storage, and a low-side power device connected between the first node and a low-side node of the intermediate circuit storage; and at least a second half-bridge comprising a high-side power device connected between a second node and the high-side node of the intermediate circuit storage, and a low-side power device connected between the second node and the low-side node of the intermediate circuit storage; a gate driver circuit connected with each gate of the high-side device and low-side power device of the first and second half-bridges and operable to provide each gate with a respective voltage to control operation of the respective power device, wherein the gate driver circuit is operable to provide a first voltage which is higher than a first threshold voltage of the respective power device at which the respective power device becomes conductive for continuously conducting a rated current of the respective power device, and a second voltage which is higher than a surge threshold of the respective power device, wherein the surge threshold is at least two times as high as the first threshold and defines the onset of a surge current operation area of the respective power device at which the respective power device becomes operable to conduct a surge current which is at least five times as large as the rated current of the respective power device. - View Dependent Claims (18)
-
Specification