COMPOSITE RESIN AND ELECTRONIC DEVICE

• US 20160218095A1
• Filed: 09/04/2015
• Published: 07/28/2016
• Est. Priority Date: 01/22/2015
• Status: Abandoned Application

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: SUGIZAKI, Yoshiaki
• Application Number:
  US14/845,898
• Publication Number:
  US 20160218095A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C08K 3/22 of metals
• CPC Class Codes: H01B 1/22 the conductive material comprising metals or alloys
• CPC Class Codes: H01C 7/105 Varistor cores H01C7/12 takes precedence
• CPC Class Codes: H01C 7/112 ZnO type
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 24/19 Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 24/32 of an individual layer connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 24/49 of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 27/0248 : for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/15 : including semiconductor components having potential barriers, specially adapted for light emission
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1421 : RF devices
• CPC Class Codes: H01L 2924/1461 : MEMS
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 33/06 : within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/32 : containing nitrogen
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/56 : Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

According to one embodiment, a composite resin includes a resin component; a plurality of first powder bodies dispersed in the resin component, and having a nonlinear current-voltage characteristic having a decreasing resistance as a voltage increases; and a plurality of second powder bodies dispersed in the resin component, and having electrical conductivity. The plurality of first powder bodies is a polycrystalline powder body including a plurality of primary particles bound via a grain boundary, a component different from a main component of the plurality of primary particles being present. A work function of the plurality of second powder bodies is not more than a work function of the plurality of primary particles.

Claims

1. A composite resin comprising:

a resin component;

a plurality of first powder bodies dispersed in the resin component, and having a nonlinear current-voltage characteristic having a decreasing resistance as a voltage increases; and

a plurality of second powder bodies dispersed in the resin component, and having electrical conductivity,

the plurality of first powder bodies being a polycrystalline powder body including a plurality of primary particles bound via a grain boundary, a component different from a main component of the plurality of primary particles being present, and

a work function of the plurality of second powder bodies being not more than a work function of the plurality of primary particles.

2. The resin according to claim 1, wherein the component different from the main component of the plurality of primary particles is present at a higher concentration in the grain boundary than in an interior of the plurality of primary particles.

3. The resin according to claim 1, wherein the primary particles contain zinc oxide as the main component.

4. The resin according to claim 3, wherein the primary particles have a semiconductor of wurtzite crystal structure.

5. The resin according to claim 3, wherein at the grain boundary, an element of either bismuth or praseodymium is present at a higher concentration than in the inside of the primary particles.

6. The resin according to claim 3, wherein the second powder bodies contain at least any of tungsten, ruthenium, rhenium, molybdenum, and chromium.

7. The resin according to claim 3, wherein the second powder bodies contain at least either of ITO (indium tin oxide) and IGZO (InGaZnOx).

8. The resin according to claim 3, wherein the second powder bodies contain at least any of tantalum, titanium, niobium, manganese, aluminum, and zirconium.

9. The resin according to claim 3, wherein the second powder bodies contain hafnium.

10. The resin according to claim 3, wherein the second powder bodies contain at least any of tin, bismuth, lead, and indium.

11. The resin according to claim 3, wherein the second powder bodies contain silver.

12. The resin according to claim 3, wherein the second powder bodies contain at least any of iron, silicon, antimony, boron, gallium, vanadium, zinc, magnesium, thorium, neodymium, and yttrium.

13. An electronic device comprising:

a semiconductor layer having a first face and a second face, the second face being on a side opposite to the first face;

a first electrode provided on the semiconductor layer on the second face side;

a second electrode provided on the semiconductor layer on the second face side and separated from the first electrode;

a first interconnect unit connected to the first electrode;

a second interconnect unit separated from the first interconnect unit and connected to the second electrode; and

a composite resin provided in contact with the first interconnect unit and the second interconnect unit,

the composite resin including

a resin component,

a plurality of first powder bodies dispersed in the resin component, and having a nonlinear current-voltage characteristic having a decreasing resistance as a voltage increases, and

a plurality of second powder bodies dispersed in the resin component, and having electrical conductivity,

the plurality of first powder bodies being a polycrystalline powder body including a plurality of primary particles bonding via a grain boundary, a component different from a main component of the plurality of primary particles being present, and

a work function of the plurality of second powder bodies being not more than a work function of the plurality of primary particles.

14. The device according to claim 13, wherein the component different from the main component of the plurality of primary particles is present at a higher concentration in the grain boundary than in an interior of the plurality of primary particles.

15. The device according to claim 13, wherein at least either of the first powder bodies and the second powder bodies are in contact with at least either of the first interconnect unit and the second interconnect unit.

16. The device according to claim13, wherein some of the first powder bodies are in contact with at least either of the first interconnect unit and the second interconnect unit via the second powder bodies.

17. The device according to claim 13, wherein the primary particles contain zinc oxide as the main component.

18. The device according to claim 17, wherein the primary particles have a semiconductor of a wurtzite crystal structure.

20. The device according to claim 17, wherein the second powder bodies have a size smaller than a minimum distance between the first interconnect unit and the second interconnect unit.

21. The device according to claim 17, wherein the second powder bodies are melted and are in contact with at least any of the first powder bodies, the first interconnect unit, and the second interconnect unit in a wet-spreading form.

22. The device according to claim 17, wherein the second powder bodies have a melting point lower than a heat-resistant temperature of the resin component.

23. The device according to claim 17, wherein the semiconductor layer has a light emitting layer.

24. The device according to claim 17, wherein the semiconductor layer is supported by a support including the first interconnect unit, the second interconnect unit, and a resin layer, the resin layer including the composite resin and provided between the first interconnect unit and the second interconnect unit.

19. The device according to claiml7, wherein the primary particles have a size smaller than a minimum distance between the first interconnect unit and the second interconnect unit.