Clamped Avalanche Photodiode

• US 20160218236A1
• Filed: 01/27/2016
• Published: 07/28/2016
• Est. Priority Date: 01/27/2015
• Status: Active Grant

• Current Assignee: LadarSystems, Inc.
• Original Assignee: Voxtel, Inc. (Allegro MicroSystems, LLC)
• Inventors: DHULLA, Vinit, Miller, Drake, Forbes, Leonard
• Granted Patent: US 10,217,889 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 29/872 Schottky diodes
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes

Abstract

An avalanche photodiode device operated in Geiger-mode, the device comprising a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode. The device further comprising a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region. Additionally comprising a diode on the second semiconductor region and having a turn-on voltage than the P-N junction.

Claims

1. An avalanche photodiode device operated in Geiger-mode, the device comprising:

a P-N junction formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and a cathode;

a third semiconductor region, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region; and

a diode on the second semiconductor region and having a turn-on voltage lower than the P-N junction.

2. The device of claim 1, wherein the clamp diode is a Schottky diode.

3. The device of claim 1, wherein the first semiconductor region is N-type.

4. The device of claim 1, wherein the substrate is from the group silicon, germanium, or indium phosphide.

5. The device of claim 1, wherein the clamp contact is in electrical communication with the third semiconductor region via metal interconnect layers.

6. The device of claim 1, wherein the diode contact is in electrical contact with the third semiconductor region via wire bonding.

7. The device of claim 1, wherein the diode turn-on voltage is optimized to reduce dead time, afterpulsing, latchup, or combinations thereof.

8. The device of claim 1, wherein the diode is has a potential applied.

9. The device of claim 8, wherein the potential is modulated.

10. The device of claim 1, further comprising of an isolation barrier.

11. The device of claim 10, wherein the isolation barrier is a trench.

12. The device of claim 1, wherein the substrate is back thinned.

13. The device of claim 1, wherein the substrate has a coating.

14. The device of claim 13, wherein the coating is a spectral coating.

15. The device of claim 1, wherein a diffractive pattern is incorporated

20. The device of claim 1, wherein the diode turn-on voltage is optimized to reduce dead time, afterpulsing, latchup, or combinations thereof.

16. A avalanche photodiode device operated in Geiger-mode, the device comprising:

An array of individual of P-N junctions formed on a substrate with a first semiconductor region and a second semiconductor region with an anode and cathode;

a respective third semiconductor region, for each of the individual P-N junctions, the third semiconductor region in physical contact with the second region, not in physical contact with the first region, and being the same semiconductor-type as the first semiconductor region; and

a respective diode for each of the individual P-N junctions, wherein each of the diodes are on each of the respective individual second semiconductor region and in electrical communication with the third semiconductor regions and each of the diodes have a voltage drop lower than the P-N junction.

17. The device of claim 16, wherein the substrate has a spectral coating.

18. The device of claim 19, wherein the spectral coating is different for at least two devices of the plurality of the array.

19. The device of claim 16 wherein the clamp diode is a Schottky diode.