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METHOD OF WAFER-LEVEL HERMETIC PACKAGING WITH VERTICAL FEEDTHROUGHS

  • US 20160221824A1
  • Filed: 09/11/2013
  • Published: 08/04/2016
  • Est. Priority Date: 09/11/2013
  • Status: Active Grant
First Claim
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1. ) A method for wafer-level hermetic packaging of MEMS components (4) comprising:

  • Providing a first substrate (2) having a MEMS component (4), “

    conductive leads”

    of the MEMS component (4), anchors(10) that keep some part of the MEMS component (4) at a predefined offset from the surface of the substrate, and a sealing region (12) that completely surrounds the MEMS component (4) as well as the “

    conductive leads”

    ,Providing a second substrate (16) having a number of vertical feedthroughs (28) formed using the first silicon layer (18) of the substrate, a sealing wall (26) formed using the first silicon layer (18) of the substrate and completely surrounding the vertical feedthroughs (26), a roof (32) formed using the second silicon layer (22) and buried oxide layer (20) of the substrate and completely covering the region surrounded by the sealing wall (26) from the top, a number of via openings (24) formed using the second silicon layer (22) and buried oxide layer (20) of the substrate and reaching to the top surfaces of the vertical feedthroughs (28) through the roof (32), and a cavity (30) surrounded by the sealing wall (26) and the roof (32),Bonding the sealing region (12) of the first substrate (2) to the sealing wall (26) of the second substrate (16) in such a way that the MEMS component (4) on the first substrate (2) is encapsulated in a closed volume defined by the first substrate (2) and the cavity (30) of the second substrate (16), and simultaneously, bonding the “

    conductive leads”

    on the first substrate (2) to the corresponding vertical feedthroughs (28) on the second substrate (16),Forming wire bonding pads (38) on the exposed surfaces of the vertical feedthroughs (28) that are exposed to the via openings (24) on the second substrate (16).Providing an isolation layer (58) has been deposited over the capping substrate (16) that covers the exposed surfaces of the capping substrate (16). And the via opening (24) has been refilled with an electrical conductor (60) in order to get electrical contact from the vertical feedthrough (28).

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