SELECTIVE DEPOSITION

• US 20160222504A1
• Filed: 02/02/2016
• Published: 08/04/2016
• Est. Priority Date: 02/03/2015
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Haukka, Suvi P., Tois, Eva
• Granted Patent: US 9,816,180 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C23C 16/0227 by cleaning or etching
• CPC Class Codes: C23C 16/0272 Deposition of sub-layers, e.g. to promote the adhesion of the main coating
• CPC Class Codes: C23C 16/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 16/06 characterised by the deposition of metallic material
• CPC Class Codes: C23C 16/402 Silicon dioxide
• CPC Class Codes: C23C 16/45525 Atomic layer deposition [ALD]

Abstract

Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO₂ surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.

Claims

1. A deposition method comprising:

providing a substrate comprising a first surface and a second, different surface, wherein the first surface comprises at least one AH_x termination, where A is one or more of N, O, or S and x is from 1 to 2, and the second surface is a H-terminated surface; and

contacting the substrate with a first vapor phase precursor comprising Ni, Ti, Fe, or Co;

thereby selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface of the substrate relative to the second surface of the same substrate.

2. The method of claim 1, wherein the selectively deposited material comprises Ni or Co.

3. The method of claim 1, further comprising contacting the substrate with a second vapor phase reactant.

4. The method of claim 1, wherein the second H-terminated surface is formed by treating at least a portion of the substrate surface prior to depositing the thin film.

5. The method of claim 1, wherein the second H-terminated surface is formed by treating at least a portion of the substrate surface with a HF etch.

6. The method of claim 1, wherein the second H-terminated surface is formed by treating at least a portion of the substrate surface with a silicon compound comprising ClSiH₃ or (R^IR^IIN)SiH₃, where R^I and R^II are independently selected from C₁-C₄ alkyls, such as methyl, ethyl, n-propyl, i-propyl, n-butyl, i-butyl.

7. The method of claim 1, wherein the first surface comprises at least one OH-termination.

8. The method of claim 1, wherein the first surface comprises SiO₂.

9. The method of claim 1, wherein the first surface is a low-k insulator.

10. The method of claim 1, wherein the first surface comprises silicon oxide, silicon nitride, silicon oxynitride, fluorinated silica glass, carbon doped silicon oxide, or another material comprising at least 50% silicon oxide.

11. The method of claim 1, wherein the second surface comprises —

SiH₃, —

SiH₂, or —

SiH surface terminations.

12. The method of claim 1, wherein the material comprising Ni, Ti, Fe, or Co is selectively deposited on the first surface relative to the second H-terminated surface with a selectivity of at least 90%.

13. The method of claim 1, wherein the deposition method is an ALD or CVD process.

14. A method of selectively depositing a material comprising Ni, Ti, Fe, or Co on a substrate, the method comprising:

providing a substrate comprising a first surface comprising silicon oxide;

etching at least a portion of the first surface to thereby provide a second H-terminated surface; and

selectively depositing a material comprising Ni, Ti, Fe, or Co on the first silicon oxide surface relative to the second H-terminated surface.

15. The method of claim 14, wherein selectively depositing a material comprising Ni, Ti, Fe, or Co comprises selectively depositing until a material comprising Ni, Ti, Fe, or Co of a desired thickness is formed.

16. The method of claim 14, wherein the method of selectively depositing a material comprising Ni, Ti, Fe, or Co on a substrate is an ALD or CVD process.

17. The method of claim 14, wherein etching at least a portion of the first surface comprises exposing said portion of the first surface to HF.

18. The method of claim 14, wherein the material comprising Ni, Ti, Fe, or Co film is selectively deposited on the first surface relative to the second H-terminated surface with a selectivity of at least 90%.

19. A method for selectively forming SiO₂ on a substrate comprising:

selectively depositing material comprising Ni, Ti, Fe, or Co on a first surface of the substrate relative to a second H-terminated surface of the same substrate, wherein the first surface comprises at least an AH_x termination, where A is one or more of O, N and S and x is from 1 to 2;

selectively depositing SiO₂ on the second H-terminated surface of the substrate relative to the first surface of the same substrate.

20. The method of claim 19, wherein the method further comprises etching the substrate to remove the material comprising Ni, Ti, Fe, or Co from the substrate.

21. The method of claim 20, wherein etching the substrate comprises exposing the substrate to at least one of HCl, HNO₃, or H₂SO₄:

H₂O₂.

22. The method of claim 19, wherein the first surface comprises an OH-terminated surface.

23. The method of claim 19, wherein the first surface comprises silicon oxide.

24. The method of claim 19, wherein the second surface comprises —

SiH, —

SiH₂, or —

SiH₃ surface terminations.

25. The method of claim 19, wherein SiO₂ is selectively deposited on the second surface of the substrate relative to the first surface by a PEALD or thermal ALD process.