SELECTIVE DEPOSITION
First Claim
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1. A deposition method comprising:
- providing a substrate comprising a first surface and a second, different surface, wherein the first surface comprises at least one AHx termination, where A is one or more of N, O, or S and x is from 1 to 2, and the second surface is a H-terminated surface; and
contacting the substrate with a first vapor phase precursor comprising Ni, Ti, Fe, or Co;
thereby selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface of the substrate relative to the second surface of the same substrate.
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Abstract
Methods are provided for selectively depositing a surface of a substrate relative to a second, different surface. An exemplary deposition method can include selectively depositing a material, such as a material comprising nickel, nickel nitride, cobalt, iron, and/or titanium oxide on a first surface, such as a SiO2 surface, relative to a second, different surface, such as a H-terminated surface, of the same substrate. Methods can include treating a surface of the substrate to provide H-terminations prior to deposition.
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Citations
25 Claims
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1. A deposition method comprising:
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providing a substrate comprising a first surface and a second, different surface, wherein the first surface comprises at least one AHx termination, where A is one or more of N, O, or S and x is from 1 to 2, and the second surface is a H-terminated surface; and contacting the substrate with a first vapor phase precursor comprising Ni, Ti, Fe, or Co; thereby selectively depositing a material comprising Ni, Ti, Fe, or Co on the first surface of the substrate relative to the second surface of the same substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method of selectively depositing a material comprising Ni, Ti, Fe, or Co on a substrate, the method comprising:
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providing a substrate comprising a first surface comprising silicon oxide; etching at least a portion of the first surface to thereby provide a second H-terminated surface; and selectively depositing a material comprising Ni, Ti, Fe, or Co on the first silicon oxide surface relative to the second H-terminated surface. - View Dependent Claims (15, 16, 17, 18)
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19. A method for selectively forming SiO2 on a substrate comprising:
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selectively depositing material comprising Ni, Ti, Fe, or Co on a first surface of the substrate relative to a second H-terminated surface of the same substrate, wherein the first surface comprises at least an AHx termination, where A is one or more of O, N and S and x is from 1 to 2; selectively depositing SiO2 on the second H-terminated surface of the substrate relative to the first surface of the same substrate. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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Specification