HIGH CONDUCTIVITY HIGH FREQUENCY VIA FOR ELECTRONIC SYSTEMS
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Abstract
A through silicon via is described that has conductivity at high frequencies. In one example, the via includes a channel through at least a portion of a silicon die. A first conductive layer has a first electrical conductivity. A second conductive layer covers the outer surface of the first conductive layer and has a second electrical conductivity higher than the first electrical conductivity.
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Citations
47 Claims
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1-28. -28. (canceled)
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29-1. The via of claim 29, wherein the first conductive layer is copper and the second conductive layer is graphene.
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33-1. The via of claim 33, wherein the via is cylindrical and the first conductive layer is cylindrical and wherein the center of the via is filled with carbon nanotubes.
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36-1. The via of claim 36, wherein the tubes of the plurality of cylindrical tubes each have a higher conductivity skin layer on an outer surface.
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42. A method comprising:
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creating a via through a silicon substrate; depositing a dielectric on a surface of the via; depositing a second conductive layer having a second electrical conductivity on the dielectric surface; depositing a first conductive layer having a first lower electrical conductivity within the via surrounded by and adjacent to the second conductive layer; and applying metallization to the via to form electrical connections to the via. - View Dependent Claims (45)
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43-1. The method of claim 43, further comprising creating a cylindrical opening in the center of the via and filling the opening with a dielectric.
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46-1. The system of claim 46, wherein the via further comprises a plurality of additional conductive layers of the first electrical conductivity formed concentrically within the via and each separated by an additional conductive layer of the second electrical conductivity.
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47. The system of claim 47, wherein the plurality of additional conductive layers are further separated each by an additional dielectric layer.
Specification