ELECTRODE CONNECTION STRUCTURE AND ELECTRODE CONNECTION METHOD

• US 20160225730A1
• Filed: 04/08/2016
• Published: 08/04/2016
• Est. Priority Date: 10/09/2013
• Status: Active Grant

• Current Assignee: Waseda University (Waseda University Educational Association)
• Original Assignee: Waseda University (Waseda University Educational Association)
• Inventors: Tatsumi, Kohei
• Granted Patent: US 9,601,448 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/0345 Physical vapour deposition [PVD], e.g. evaporation, or sputtering
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/04 Structure, shape, material or disposition of the bonding areas prior to the connecting process
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04026 Bonding areas specifically adapted for layer connectors
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05173 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/05639 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05673 Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/11334 : using preformed bumps
• CPC Class Codes: H01L 2224/1134 : Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13012 : in top view
• CPC Class Codes: H01L 2224/13017 : being non uniform along the bump connector
• CPC Class Codes: H01L 2224/13139 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13144 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13155 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13294 : with a principal constituent of the material being a liquid not provided for in groups H01L2224/132 - H01L2224/13291
• CPC Class Codes: H01L 2224/13339 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/13344 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/13347 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/13355 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13411 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/136 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13611 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/16225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 : the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/16245 : the item being metallic
• CPC Class Codes: H01L 2224/18 : High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 2224/24225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/24245 : the item being metallic
• CPC Class Codes: H01L 2224/245 : Material
• CPC Class Codes: H01L 2224/2499 : Auxiliary members for HDI interconnects, e.g. spacers, alignment aids
• CPC Class Codes: H01L 2224/29012 : in top view
• CPC Class Codes: H01L 2224/29017 : being non uniform along the layer connector
• CPC Class Codes: H01L 2224/29147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/32227 : the layer connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/37147 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/3716 : Iron [Fe] as principal constituent
• CPC Class Codes: H01L 2224/40095 : Kinked
• CPC Class Codes: H01L 2224/40227 : Connecting the strap to a bond pad of the item
• CPC Class Codes: H01L 2224/40991 : being formed on the semiconductor or solid-state body to be connected
• CPC Class Codes: H01L 2224/40996 : being formed on an item to be connected not being a semiconductor or solid-state body
• CPC Class Codes: H01L 2224/45147 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 : the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48839 : Silver (Ag) as principal constituent
• CPC Class Codes: H01L 2224/48844 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/48847 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48855 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/48864 : Palladium (Pd) as principal constituent
• CPC Class Codes: H01L 2224/48873 : Rhodium (Rh) as principal constituent
• CPC Class Codes: H01L 2224/48991 : being formed on the semiconductor or solid-state body to be connected
• CPC Class Codes: H01L 2224/48996 : being formed on an item to be connected not being a semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73221 : Strap and wire connectors
• CPC Class Codes: H01L 2224/73255 : Bump and strap connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73273 : Strap and HDI connectors
• CPC Class Codes: H01L 2224/73277 : Wire and HDI connectors
• CPC Class Codes: H01L 2224/75754 : Guiding structures
• CPC Class Codes: H01L 2224/76754 : Guiding structures
• CPC Class Codes: H01L 2224/81002 : being a removable or sacrificial coating
• CPC Class Codes: H01L 2224/81205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/81439 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/81444 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/81447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/81455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/81464 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/81473 : Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/8184 : Sintering
• CPC Class Codes: H01L 2224/81901 : Pressing the bump connector against the bonding areas by means of another connector detachable pressure contact H01L2224/72
• CPC Class Codes: H01L 2224/8192 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
• CPC Class Codes: H01L 2224/82002 : being a removable or sacrificial coating
• CPC Class Codes: H01L 2224/82101 : by additive methods, e.g. direct writing
• CPC Class Codes: H01L 2224/82399 : Material
• CPC Class Codes: H01L 2224/83002 : being a removable or sacrificial coating
• CPC Class Codes: H01L 2224/83205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/83439 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/83444 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/83447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/83455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/83464 : Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/83473 : Rhodium [Rh] as principal constituent
• CPC Class Codes: H01L 2224/83815 : Reflow soldering
• CPC Class Codes: H01L 2224/8384 : Sintering
• CPC Class Codes: H01L 2224/83901 : Pressing the layer connector against the bonding areas by means of another connector
• CPC Class Codes: H01L 2224/8392 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/8492 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/85205 : Ultrasonic bonding
• CPC Class Codes: H01L 2224/85447 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/8592 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/9201 : Forming connectors during the connecting process, e.g. in-situ formation of bumps
• CPC Class Codes: H01L 23/49816 : Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
• CPC Class Codes: H01L 23/49827 : Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/45 : of an individual wire connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/75 : Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/76 : Apparatus for connecting with build-up interconnects
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00011 : Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01028 : Nickel [Ni]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01045 : Rhodium [Rh]
• CPC Class Codes: H01L 2924/01046 : Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10272 : Silicon Carbide [SiC]
• CPC Class Codes: H01L 2924/3656 : Formation of Kirkendall voids

Abstract

An electrode connection structure includes: a first electrode of an electrical circuit; and a second electrode of the electrical circuit that is electrically connected to the first electrode. The first and second electrodes are oppositely disposed in direct or indirect contact with each other. A plated lamination is substantially uniformly formed by plating process from a surface of a contact region and opposed surfaces of the first and second electrodes. A void near the surface of the contact region is filled by formation of the plated lamination. Portions of the plated lamination formed from the opposed surfaces of the first and second electrodes in a region other than the contact region are not joined together.

Claims

1. An electrode connection structure comprising:

a first electrode of an electrical circuit; and

a second electrode of the electrical circuit that is electrically connected to the first electrode, wherein

the first and second electrodes are oppositely disposed in direct or indirect contact with each other at an at least one contact region,

a plated lamination is formed on a surface near the contact region and opposed surfaces of the first and second electrodes,

and

portions of the plated lamination formed on the opposed surfaces of the first and second electrodes in a region other than the contact region are separated, and a portion near the contact region consists only of the plated lamination.

2. The electrode connection structure according to claim 1, wherein contact portions where the first and second electrodes are in direct or indirect contact with each other, are held in a point-like or linear manner.

3. The electrode connection structure according to claim 1, wherein a plating material comprises a metal having a melting point of 700°

C. or higher, or an alloy of the metal.

4. The electrode connection structure according to claim 1, wherein

a plating material comprises nickel or a nickel alloy, or copper or a copper alloy, and

a material of each surface of the first and second electrodes to be connected comprises nickel or a nickel alloy, copper or a copper alloy, gold or a gold alloy, or silver or a silver alloy.

5. The electrode connection structure according to claim 1, wherein the first and second electrodes are electrically connected through a spherical or hemispherical conductive terminal, or a lead wire.

6. The electrode connection structure according to claim 1, wherein

the first and second electrodes to be electrically connected, comprise one of a chip electrode and a substrate electrode and the other, respectively, and

the chip comprises an SiC semiconductor, a GaN semiconductor, a power Si semiconductor, a solar cell Si semiconductor, or an LED element.

7. The electrode connection structure according to claim 1, wherein when a chip backside electrode as the first electrode and a substrate electrode as the second electrode are connected with a die bonding structure, a through-hole for circulating a plating solution is formed in the substrate electrode.

8. The electrode connection structure according to claim 1, wherein

the first and second electrodes are directly or indirectly connected with the respective electrodes in a conduction state by solder or low temperature sintered metal, and

a junction is formed by coating the connected portion with plating.

9. The electrode connection structure according to claim 1, further comprising first and second convex electrodes in direct contact with the first and second electrodes across an interposer in between the first and second electrodes, wherein

a plating layer is formed across the interposer in a state where an imaginary line passing through respective centers of the first and second convex electrodes across the interposer is not perpendicular to an electrode plane of the first and/or second electrodes.

10. The electrode connection structure according to claim 1, wherein

the first and second electrodes comprise an electrode between chips or an electrode between a chip and a substrate, and

the tip and/or the substrate are plate-processed with the same sandwiched vertically, in a state where the first and second electrodes are in direct or indirect contact with each other.

11. The electrode connection structure according to claim 10, further comprising a metal body that vertically sandwiches the chip and/or the substrate and fixes the first electrode and second electrodes by elastic force and that serves as a wiring.

12. The electrode connection structure according to claim 1, wherein

at least one of the first and second electrodes comprises a chip electrode, and

at least a side portion of a chip having the chip electrode is coated with an insulating material.

13. The electrode connection structure according to claim 1, wherein

in a case where the first electrode and the second electrode are in direct contact with each other, a nearby contact region of the first electrode side is defined as a first contact part and a nearby contact region of the second electrode side is defined as a second contact part, or

in a case where the first electrode and the second electrode are in indirect contact with each other through a conductive terminal, a nearby contact region of the first and second electrodes side is defined as a first contact part and a nearby contact region of the conductive terminal side is defined as a second contact part,

a distance between the first contact part and the second contact part continuously increases in an outside direction of the first and second contact parts from a contact place of the first and second contact parts, and

of a plated structure formed in a region where an angle between the first and second contact parts is within 15 degrees, an interface crystal structure in which an angular difference in crystal orientations at an association interface where crystal that grows from the first contact part and crystal that grows from the second contact part associate is within 15 degrees, is formed by not less than 50% of the entire association interface.

14. The electrode connection structure according to claim 13, wherein

a material of the plating has a crystal structure belonging to a cubical crystal, Electrode connection structure characterized in that said plating material has a, a <

100>

or <

110>

oriented crystal orientation to be grown by plating.

15. An electrode connection method of forming the electrode connection structure according to claim 1, comprising:

placing at least portions of the first and second electrodes in direct or indirect contact with each other on the at least one contact region;

plating a periphery of the contact region and the first and second electrodes in a state where a plating solution is circulated in the periphery of the contact region; and

stopping the plating process, in a state where a plated lamination surface nearest to the contact region is in contact with the plating solution, before a void shielded by a surface of the plated lamination formed on the respective first and second electrodes occurs.

16. The electrode connection method according to claim 15, wherein

the first and second electrodes are oppositely disposed in direct or indirect contact with each other through a convex portion,

a plated lamination is formed by plating process from a contact region surface of the convex portion and opposed surfaces of the first and second electrodes, and

a void is filled by the lamination forming in order from a region near the contact region surface of the convex portion.

17. The electrode connection structure according to claim 1, wherein the first electrode comprises a first contact region and the second electrode comprises a second contact region, the first contact region and the second contact region indirectly contact with each other.

18. The electrode connection structure according to claim 1, wherein the plated lamination is substantially uniformly formed on the surface near the contact region and opposed surfaces of the first and second electrodes.