SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE, OR DISPLAY DEVICE INCLUDING THE SEMICONDUCTOR DEVICE
First Claim
1. A method for manufacturing a semiconductor device, comprising the steps of:
- forming an oxide semiconductor film at a first temperature;
processing the oxide semiconductor film into an island shape;
then, not performing a process at a temperature higher than the first temperature, but depositing a material to be a source electrode and a drain electrode by a sputtering method over the oxide semiconductor film;
processing the material to form the source electrode and the drain electrode;
then, forming a protective insulating film over the oxide semiconductor film, the source electrode and the drain electrode,then forming a first barrier film over the protective insulating film;
adding excess oxygen or an oxygen radical to the protective insulating film through the first barrier film;
performing heat treatment at a second temperature lower than 400°
C. to diffuse the excess oxygen or the oxygen radical into the oxide semiconductor film;
removing the first barrier film or a part of the first barrier film, and a part of the protective insulating film by wet etching; and
then forming a second barrier film over the protective insulating film.
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Accused Products
Abstract
A method for manufacturing a highly reliable semiconductor device is provided. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; not performing a process at a temperature higher than the first temperature, but depositing a material to be source and drain electrodes by a sputtering method; processing the material to form the source and drain electrodes; forming a protective insulating film, and then forming a first barrier film; adding excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400° C. to diffuse the excess oxygen or oxygen radicals into the oxide semiconductor film; and removing part of the first barrier film and part of the protective insulating film by wet etching, and then forming a second barrier film.
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Citations
22 Claims
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1. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; then, not performing a process at a temperature higher than the first temperature, but depositing a material to be a source electrode and a drain electrode by a sputtering method over the oxide semiconductor film; processing the material to form the source electrode and the drain electrode; then, forming a protective insulating film over the oxide semiconductor film, the source electrode and the drain electrode, then forming a first barrier film over the protective insulating film; adding excess oxygen or an oxygen radical to the protective insulating film through the first barrier film; performing heat treatment at a second temperature lower than 400°
C. to diffuse the excess oxygen or the oxygen radical into the oxide semiconductor film;removing the first barrier film or a part of the first barrier film, and a part of the protective insulating film by wet etching; and then forming a second barrier film over the protective insulating film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; then, not performing a process at a temperature higher than the first temperature, but depositing a material to be a source electrode and a drain electrode by a sputtering method; processing the material to form the source electrode and the drain electrode; then, forming a protective insulating film over the oxide semiconductor film, the source electrode and the drain electrode, forming a metal oxide film as a first barrier film over the protective insulating film by a sputtering method to add excess oxygen or an oxygen radial to the protective insulating film; and performing heat treatment at a second temperature lower than 400°
C. to diffuse the excess oxygen or the oxygen radical into the oxide semiconductor film. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method for manufacturing a semiconductor device, comprising the steps of:
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forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; after processing the oxide semiconductor film, depositing a material to be a source electrode and a drain electrode over the oxide semiconductor film by a sputtering method; processing the material to form the source electrode and the drain electrode; forming a first protective insulating film and a second protective insulating film over the oxide semiconductor film, the source electrode, and the drain electrode; heating the first protective insulating film and the second protective insulating film at a second temperature higher than the first temperature; after heating the first protective insulating film and the second protective insulating film, forming a first barrier film over the second protective insulating film; adding excess oxygen or an oxygen radical to the second protective insulating film through the first barrier film; after adding the excess oxygen or the oxygen radical, removing a part of the first barrier film and a part of the second protective insulating film by wet etching; and after removing the part of the first barrier film and the part of the second protective insulating film, forming a second barrier film over the second protective insulating film at a third temperature higher than the first temperature, wherein one of or both the second temperature and the third temperature is/are the highest in a process of the steps. - View Dependent Claims (17, 18, 19, 20, 21, 22)
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Specification