METAL OXIDE SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, DISPLAY APPARATUS, IMAGE SENSOR, AND X-RAY SENSOR

• US 20160225859A1
• Filed: 04/11/2016
• Published: 08/04/2016
• Est. Priority Date: 12/06/2013
• Status: Abandoned Application

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: TAKATA, Masahiro, TANAKA, Atsushi, SUZUKI, Masayuki
• Application Number:
  US15/095,168
• Publication Number:
  US 20160225859A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/14658 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 29/24 including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22 including organic materials H10K99/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided are a metal oxide semiconductor film and a device including the same, the metal oxide semiconductor film including at least indium as a metal component, in which when an indium concentration in the metal oxide semiconductor film is represented by D_I (atoms/cm³), and when a hydrogen concentration in the metal oxide semiconductor film is represented by D_H (atoms/cm3), the following relational expression (1) is satisfied:

0.1≦D_H/D_I≦1.8  (1).

Claims

1. A metal oxide semiconductor film comprising at least indium as a metal component,

wherein when an indium concentration in the metal oxide semiconductor film is represented by D_I (atoms/cm³), and when a hydrogen concentration in the metal oxide semiconductor film is represented by D_H (atoms/cm³), the following relational expression (1) is satisfied:

0.1≦

D_H/D_I≦

1.8 

 

(1).

2. The metal oxide semiconductor film according to claim 1,

wherein the following relational expression (2) is satisfied:

0.5≦

D_H/D_I≦

1.3 

 

(2).

3. The metal oxide semiconductor film according to claim 1,

wherein an indium content in the metal oxide semiconductor film is 50 atom % or higher with respect to all the metal elements included in the metal oxide semiconductor film.

4. The metal oxide semiconductor film according to claim 1,

wherein an average film density is 6 g/cm³ or higher when measured by X-ray reflectometry.

5. The metal oxide semiconductor film according to claim 1,

wherein when a nitrogen concentration in the metal oxide semiconductor film is represented by D_N (atoms/cm³), the following relational expression (3) is satisfied:

0.004≦

D_N/D_I≦

0.012 

 

(3).

6. The metal oxide semiconductor film according to claim 1,

wherein when a carbon concentration in the metal oxide semiconductor film is represented by D_C (atoms/cm³), the following relational expression (4) is satisfied:

0.016≦

D_C/D_I≦

0.039 

 

(4).

7. The metal oxide semiconductor film according to claim 1,

wherein not only indium but also at least one metal element selected from the group consisting of zinc, tin, gallium, and aluminum are included as metal components.

8. A thin film transistor comprising:

an active layer that includes the metal oxide semiconductor film according to claim 1;

a source electrode;

a drain electrode;

a gate insulating film; and

a gate electrode.

9. A display apparatus comprising

the thin film transistor according to claim 8.

10. An image sensor comprising

the thin film transistor according to claim 8.

11. An X-ray sensor comprising

the thin film transistor according to claim 8.