SEMICONDUCTOR DEVICE
1 Assignment
0 Petitions
Accused Products
Abstract
An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.
30 Citations
15 Claims
-
1. (canceled)
-
2. A semiconductor device comprising:
-
a first metal oxide film over a substrate; an oxide semiconductor film in contact with the first metal oxide film; a second metal oxide film in contact with the oxide semiconductor film; and a gate electrode over the second metal oxide film, wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film. - View Dependent Claims (3, 4, 5, 6, 7, 8)
-
-
9. A semiconductor device comprising:
-
a first metal oxide film over a substrate; an oxide semiconductor film in contact with the first metal oxide film; source and drain electrodes in contact with the oxide semiconductor film; a second metal oxide film in contact with the oxide semiconductor film; a gate insulating film over the second metal oxide film; and a gate electrode over the gate insulating film, wherein an energy at a bottom of a conduction band of each of the first metal oxide film and the second metal oxide film is higher than an energy at a bottom of a conduction band of the oxide semiconductor film. - View Dependent Claims (10, 11, 12, 13, 14, 15)
-
Specification