FLEXIBLE GAN LIGHT-EMITTING DIODES
First Claim
1. A method of fabricating a continuous-film, crystalline, semiconductor, flexible, free-standing light-emitting diode (LED), the method comprising:
- forming an LED structure on a first rigid substrate;
attaching the LED structure to a supporting substrate using an adhesive;
using a selective laser lift-off (LLO) process to separate at least a portion of the LED structure from the first rigid substrate; and
immersing the LED structure in a solvent bath to dissolve the adhesive and separate the LED structure from the rigid supporting substrate.
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Abstract
Methods of fabricating flexible, free-standing LED structures are provided. An LED structure can be formed on a sapphire substrate, and the surface of the LED structure can then be coated with epoxy and attached to a rigid supporting substrate. A laser lift-off process can be performed using an ultraviolent beam from a high-power pulsed-mode laser and a shadow mask, causing at least a portion of the LED structure to separate from the sapphire substrate. The structure can then be immersed in an acetone bath to dissolve the epoxy and separate the structure from the supporting substrate.
62 Citations
28 Claims
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1. A method of fabricating a continuous-film, crystalline, semiconductor, flexible, free-standing light-emitting diode (LED), the method comprising:
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forming an LED structure on a first rigid substrate; attaching the LED structure to a supporting substrate using an adhesive; using a selective laser lift-off (LLO) process to separate at least a portion of the LED structure from the first rigid substrate; and immersing the LED structure in a solvent bath to dissolve the adhesive and separate the LED structure from the rigid supporting substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 28)
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22. A method of fabricating an inorganic, continuous-film, crystalline, semiconductor, flexible LED device without attachment to a substrate, the method comprising:
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forming a GaN-based LED device from GaN-based LED wafers grown on sapphire substrates; depositing a thick, soft, metal layer onto the GaN-based LED device; and completely detaching the sapphire substrates by complete laser lift-off to form the flexible LEDs. - View Dependent Claims (23, 24, 25, 26, 27)
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Specification