LIGHT EMITTING DEVICE
First Claim
1. A light emitting device comprising:
- a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;
a light-transmissive conductive layer disposed on a first portion of the second conductive-type semiconductor layer;
a first electrode connected to the first conductive-type semiconductor layer; and
a second electrode disposed on the light-transmissive conductive layer;
wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.
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Accused Products
Abstract
A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.
12 Citations
20 Claims
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1. A light emitting device comprising:
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a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a light-transmissive conductive layer disposed on a first portion of the second conductive-type semiconductor layer; a first electrode connected to the first conductive-type semiconductor layer; and a second electrode disposed on the light-transmissive conductive layer; wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A light emitting device comprising:
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a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed; a first electrode connected to the first conductive-type semiconductor layer; and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode includes a second electrode pad and at least two second branch electrodes branching from the second electrode pad, wherein the first electrode includes a first electrode pad and a first branch electrode branching from the first electrode pad and interposed between the two second branch electrodes, and wherein the first electrode further comprises at least one through electrode in electrical contact with the first conductive-type semiconductor layer, the through electrode being formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer. - View Dependent Claims (13, 14, 15, 16)
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17. A light emitting device comprising:
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a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer; a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed; a first electrode connected to the first conductive-type semiconductor layer; and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the first electrode contacts with the first conductive-type semiconductor layer in first points, the second electrode directly contacts with portions of the second conductive-type semiconductor layer, and the first points horizontally overlap with the portions of the second conductive-type semiconductor layer. - View Dependent Claims (18, 19, 20)
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Specification