LIGHT EMITTING DEVICE

• US 20160233384A1
• Filed: 04/20/2016
• Published: 08/11/2016
• Est. Priority Date: 12/26/2011
• Status: Active Grant

• Current Assignee: Suzhou Lekin Semiconductor Company Limited
• Original Assignee: LG Innotek Company Limited (LG Corporation)
• Inventors: NO, Ji Hee, NA, Min Gyu, CHOO, Sung Ho, JU, Hyun Seoung, HONG, Gi Seok
• Granted Patent: US 10,128,412 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/49107 on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 33/06 within the light emitting region, e.g. quantum confinement structure or tunnel barrier
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/387 with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer

Abstract

A light emitting device is disclosed. The light emitting device includes a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer, a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed, and a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

Claims

1. A light emitting device comprising:

a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;

a light-transmissive conductive layer disposed on a first portion of the second conductive-type semiconductor layer;

a first electrode connected to the first conductive-type semiconductor layer; and

a second electrode disposed on the light-transmissive conductive layer;

wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.

2. The light emitting device according to claim 1, wherein the second electrode contacts with the second conductive-type semiconductor layer in a second region.

3. The light emitting device according to claim 2, wherein the light-transmissive conductive layer has a plurality of open regions, and the plurality of open regions correspond to the second region of the second conductive-type semiconductor layer.

4. The light emitting device according to claim 3, wherein at least a portion of the first electrode is interposed between at least a portion of the open regions.

5. The light emitting device according to claim 1, further comprising a light-transmissive insulating layer disposed on the light-transmissive conductive layer, wherein a portion of the first electrode is formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer from the light-transmissive insulating layer so as to be electrically connected to the first conductive-type semiconductor layer.

6. The light emitting device according to claim 5, wherein the light-transmissive insulating layer is exposed to correspond to a second portion of the second conductive-type semiconductor layer.

7. The light emitting device according to claim 1, wherein the second electrode includes a second electrode pad and at least two second branch electrodes branching from the second electrode pad.

8. The light emitting device according to claim 7, wherein at least one region in which the light-transmissive conductive layer is connected between each of the two second branch electrodes and the second conductive-type semiconductor layer is disposed in regions corresponding to the first portion of the second conductive-type semiconductor layer.

9. The light emitting device according to claim 8, wherein the at least one region includes at least two regions for each of the two second branch electrodes in which the light-transmissive conductive layer is connected between the second branch electrode and the second conductive-type semiconductor layer are disposed.

10. The light emitting device according to claim 8, wherein an area of the second branch electrode contacting the second conductive-type semiconductor layer is wider than an area of the second branch electrode connected to the light-transmissive conductive layer.

11. The light emitting device according to claim 1, wherein a height of the highest point of the second electrode pad is larger than a height of a surface of the light-transmissive insulating layer.

12. A light emitting device comprising:

a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;

a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed;

a first electrode connected to the first conductive-type semiconductor layer; and

a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions,

wherein the second electrode includes a second electrode pad and at least two second branch electrodes branching from the second electrode pad,

wherein the first electrode includes a first electrode pad and a first branch electrode branching from the first electrode pad and interposed between the two second branch electrodes, and

wherein the first electrode further comprises at least one through electrode in electrical contact with the first conductive-type semiconductor layer, the through electrode being formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer.

13. The light emitting device according to claim 12, wherein the second electrode contacts the second conductive-type semiconductor layer in the open regions and contacts the light-transmissive conductive layer in regions excluding the open regions.

14. The light emitting device according to claim 12, wherein the second branch electrode has a larger height in a connection region with the light-transmissive conductive layer than a height of the second branch electrode in a region contacting the second conductive-type semiconductor layer.

15. The light emitting device according to claim 14, wherein regions in which the light-transmissive conductive layer is connected to one of the second branch electrodes correspond to regions in which the light-transmissive conductive layer is connected to another one of the second branch electrodes.

16. The light emitting device according to claim 12, wherein a height of the highest point of the second electrode pad is larger than a height of a surface of the light-transmissive insulating layer.

17. A light emitting device comprising:

a light emitting structure including a first conductive-type semiconductor layer, an active layer, and a second conductive-type semiconductor layer;

a light-transmissive conductive layer disposed on the second conductive-type semiconductor layer and having a plurality of open regions through which the second conductive-type semiconductor layer is exposed;

a first electrode connected to the first conductive-type semiconductor layer; and

a second electrode disposed on the light-transmissive conductive layer so as to extend beyond at least one of the open regions,

wherein the first electrode contacts with the first conductive-type semiconductor layer in first points, the second electrode directly contacts with portions of the second conductive-type semiconductor layer, and the first points horizontally overlap with the portions of the second conductive-type semiconductor layer.

18. The light emitting device according to claim 17, wherein the second electrode is disposed on portions of the light-transmissive conductive layer, and the first points horizontally non-overlap with the portions of the light-transmissive conductive layer.

19. The light emitting device according to claim 17, wherein the second electrode is in ohmic contact with the light-transmissive conductive layer and is in schottky contact with the second conductive-type semiconductor layer.

20. The light emitting device according to claim 17, further comprising a light-transmissive insulating layer on the light-transmissive conductive layer, wherein a portion of the first electrode is formed to extend through the light-transmissive conductive layer, the second conductive-type semiconductor layer, and the active layer from the light-transmissive insulating layer so as to be electrically connected to the first conductive-type semiconductor layer in the first points.