Composition And Method For Lithography Patterning
First Claim
1. A method for lithography patterning, comprising:
- receiving a substrate;
applying an anti-reflective coating (ARC) composition over the substrate;
crosslinking the ARC composition thereby forming an ARC layer; and
reducing a film density of the ARC layer by cleaving an acid labile group (ALG) in the ARC layer.
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Accused Products
Abstract
An anti-reflective coating (ARC) composition for use in lithography patterning and a method of using the same is disclosed. In an embodiment, the ARC composition comprises a polymer having a chromophore; an acid labile group (ALG), more than 5% by weight; a thermal acid generator; and an optional crosslinker. The method includes applying the ARC composition over a substrate; crosslinking the polymer to form an ARC layer; cleaving the ALG of the ARC layer to reduce a film density of the ARC layer; forming a resist layer over the ARC layer, patterning the resist layer, and etching the ARC layer. Due to reduced film density, the ARC layer has a high etching rate, thereby preserving the critical dimension (CD) of the resist pattern during the etching process.
13 Citations
20 Claims
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1. A method for lithography patterning, comprising:
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receiving a substrate; applying an anti-reflective coating (ARC) composition over the substrate; crosslinking the ARC composition thereby forming an ARC layer; and reducing a film density of the ARC layer by cleaving an acid labile group (ALG) in the ARC layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for lithography patterning, comprising:
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receiving a substrate; applying an anti-reflective coating (ARC) composition over the substrate wherein the ARC composition comprises a polymer, an acid labile group (ALG), and a thermal acid generator; forming an ARC layer by crosslinking the polymer; reducing a film density of the ARC layer by cleaving the ALG of the ARC layer; and forming a resist layer over the ARC layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. An anti-reflective coating (ARC) composition for use in lithography patterning, comprising:
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a polymer, about 35% to about 95% by weight, wherein the polymer includes a chromophore; an acid labile group (ALG), more than 5% by weight; and a thermal acid generator. - View Dependent Claims (19, 20)
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Specification