SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

• US 20160240239A1
• Filed: 04/26/2016
• Published: 08/18/2016
• Est. Priority Date: 03/07/2014
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: IKEDA, Takayuki, KUROKAWA, Yoshiyuki, KOZUMA, Munehiro
• Granted Patent: US 10,002,656 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G11C 11/24 using capacitors G11C11/22 takes precedence; using a combination of semiconductor devices and capacitors G11C11/34, e.g. G11C11/40
• CPC Class Codes: G11C 11/40 using transistors
• CPC Class Codes: G11C 11/404 with one charge-transfer gate, e.g. MOS transistor, per cell
• CPC Class Codes: G11C 11/405 with three charge-transfer gates, e.g. MOS transistors, per cell
• CPC Class Codes: G11C 11/4091 Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
• CPC Class Codes: G11C 16/0441 comprising cells containing multiple floating gate devices, e.g. separate read-and-write FAMOS transistors with connected floating gates
• CPC Class Codes: G11C 16/10 Programming or data input circuits
• CPC Class Codes: G11C 27/005 with non-volatile charge storage, e.g. on floating gate or MNOS
• CPC Class Codes: G11C 27/02 Sample-and-hold arrangements G11C27/04 takes precedence
• CPC Class Codes: G11C 27/024 using a capacitive memory element G11C27/04 takes precedence
• CPC Class Codes: G11C 7/16 Storage of analogue signals in digital stores using an arrangement comprising analogue/digital [A/D] converters, digital memories and digital/analogue [D/A] converters
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 27/1207 combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 29/66969 of devices having semiconductor bodies not comprising group 14 or group 13/15 materials comprising selenium or tellurium in uncombined form other than as impurities in semiconductor bodies of other materials, comprising cuprous oxide or cuprous iodide H01L21/02365
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 29/78693 the semiconducting oxide being amorphous
• CPC Class Codes: H10B 41/70 : the floating gate being an electrode shared by two or more components
• CPC Class Codes: H10B 99/00 : Subject matter not provided for in other groups of this subclass

Abstract

A semiconductor device capable of generating a signal (e.g., a potential signal or a current signal) suitable for usage environment or a purpose. The semiconductor device includes a first memory circuit, a first circuit, and a second memory circuit. The first circuit converts a digital signal input from the first memory circuit into an analog signal. The first memory circuit includes an input node, an output node, a transistor, and a capacitor. The capacitor is electrically connected to the output node. The transistor can control a conduction state between the input node and the output node. An analog signal is input to the input node from the first circuit. The transistor includes an oxide semiconductor layer where a channel formation region is formed.

Claims

1. (canceled)

2. A semiconductor device comprising:

a circuit comprising a transistor and a capacitor; and

a digital-to-analog converter circuit converting a digital signal into an analog signal,

wherein the circuit is configured to hold an analog data corresponding to the analog signal, and

wherein a channel in the transistor includes an oxide semiconductor.

3. The semiconductor device according to claim 2,

wherein the semiconductor device further comprises a memory device, and

wherein the memory device includes a memory cell and a wiring.

4. The semiconductor device according to claim 3,

wherein the memory cell includes a second transistor, a third transistor, a second capacitor, and a node,

wherein the second transistor controls a conduction state between the wiring and the node,

wherein a gate of the third transistor and the second capacitor are electrically connected to the node, and

wherein a channel in the second transistor includes an oxide semiconductor.

5. The semiconductor device according to claim 3,

wherein the memory cell includes a second transistor, a third transistor, a fourth transistor, and a node,

wherein the second transistor controls a conduction state between the wiring and the node,

wherein the third transistor and the fourth transistor are electrically connected to each other in series,

wherein a gate of the third transistor is electrically connected to the node, and

wherein a channel in the second transistor includes an oxide semiconductor.

6. A semiconductor device comprising:

the semiconductor device according to claim 2; and

an operational amplifier electrically connected to the circuit.

7. A semiconductor device comprising:

the semiconductor device according to claim 2;

an operational amplifier electrically connected to the circuit; and

a sensor circuit electrically connected to an input node of the operational amplifier.

8. A semiconductor device comprising:

the semiconductor device according to claim 2;

an operational amplifier electrically connected to the circuit;

a sensor circuit electrically connected to the operational amplifier; and

an antenna.

9. An electronic device comprising:

the semiconductor device according to claim 2; and

at least one of a display portion, a housing, a microphone, a speaker, and an operation key.

10. A semiconductor device comprising:

an analog memory circuit comprising a transistor and a capacitor; and

a digital-to-analog converter circuit converting a digital signal into an analog signal,

wherein the analog memory circuit is configured to hold an analog data corresponding to the analog signal, and

wherein a channel in the transistor includes an oxide semiconductor.

11. The semiconductor device according to claim 10,

wherein the semiconductor device further comprises a memory device, and

wherein the memory device includes a memory cell and a wiring.

12. The semiconductor device according to claim 11,

wherein the memory cell includes a second transistor, a third transistor, a second capacitor, and a node,

wherein the second transistor controls a conduction state between the wiring and the node,

wherein a gate of the third transistor and the second capacitor are electrically connected to the node, and

wherein a channel in the second transistor includes an oxide semiconductor.

13. The semiconductor device according to claim 11,

wherein the memory cell includes a second transistor, a third transistor, a fourth transistor, and a node,

wherein the second transistor controls a conduction state between the wiring and the node,

wherein the third transistor and the fourth transistor are electrically connected to each other in series,

wherein a gate of the third transistor is electrically connected to the node, and

wherein a channel in the second transistor includes an oxide semiconductor.

14. A semiconductor device comprising:

the semiconductor device according to claim 10; and

an operational amplifier electrically connected to the analog memory circuit.

15. A semiconductor device comprising:

the semiconductor device according to claim 10;

an operational amplifier electrically connected to the analog memory circuit; and

a sensor circuit electrically connected to an input node of the operational amplifier.

16. A semiconductor device comprising:

the semiconductor device according to claim 10;

an operational amplifier electrically connected to the analog memory circuit;

a sensor circuit electrically connected to the operational amplifier; and

an antenna.

17. An electronic device comprising:

the semiconductor device according to claim 10; and

at least one of a display portion, a housing, a microphone, a speaker, and an operation key.

18. A semiconductor device comprising:

a circuit comprising a transistor and a capacitor; and

a digital-to-analog converter circuit converting a digital signal into an analog signal,

wherein one of a source and a drain of the transistor is electrically connected to the digital-to-analog converter circuit,

wherein the other of the source and the drain of the transistor is electrically connected to one of a pair of electrodes of the capacitor,

wherein the circuit is configured to hold an analog data corresponding to the analog signal, and

wherein a channel in the transistor includes an oxide semiconductor.

19. The semiconductor device according to claim 18,

wherein the semiconductor device further comprises a memory device, and

wherein the memory device includes a memory cell and a wiring.

20. The semiconductor device according to claim 19,

wherein the memory cell includes a second transistor, a third transistor, a second capacitor, and a node,

wherein the second transistor controls a conduction state between the wiring and the node,

wherein a gate of the third transistor and the second capacitor are electrically connected to the node, and

wherein a channel in the second transistor includes an oxide semiconductor.

21. The semiconductor device according to claim 19,

wherein the memory cell includes a second transistor, a third transistor, a fourth transistor, and a node,

wherein the second transistor controls a conduction state between the wiring and the node,

wherein the third transistor and the fourth transistor are electrically connected to each other in series,

wherein a gate of the third transistor is electrically connected to the node, and

wherein a channel in the second transistor includes an oxide semiconductor.

22. A semiconductor device comprising:

the semiconductor device according to claim 18; and

an operational amplifier electrically connected to the circuit.

23. A semiconductor device comprising:

the semiconductor device according to claim 18;

an operational amplifier electrically connected to the circuit; and

a sensor circuit electrically connected to an input node of the operational amplifier.

24. A semiconductor device comprising:

the semiconductor device according to claim 18;

an operational amplifier electrically connected to the circuit;

a sensor circuit electrically connected to the operational amplifier; and

an antenna.

25. An electronic device comprising:

the semiconductor device according to claim 18; and

at least one of a display portion, a housing, a microphone, a speaker, and an operation key.