MEMORY PROGRAMMING METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE DEVICE
First Claim
1. A memory programming method for a rewritable non-volatile memory module having a plurality of memory cells, the memory programming method comprising:
- performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process;
grouping the memory cells into a plurality of programming groups according to the first programming result; and
performing a second programming process on the memory cells according to the write data,wherein the second programming process comprises;
programming a first programming group among the programming groups by using a first program voltage; and
programming a second programming group among the programming groups by using a second program voltage, wherein the first program voltage and the second program voltage are different.
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Abstract
A memory programming method for a rewritable non-volatile memory module having memory cells is provided. The memory programming method includes: performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data. The second programming process includes: programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage. The first program voltage and the second program voltage are different. Moreover, a memory control circuit unit and a memory storage device are provided.
31 Citations
24 Claims
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1. A memory programming method for a rewritable non-volatile memory module having a plurality of memory cells, the memory programming method comprising:
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performing a first programming process on the memory cells according to write data and obtaining a first programming result of the first programming process; grouping the memory cells into a plurality of programming groups according to the first programming result; and performing a second programming process on the memory cells according to the write data, wherein the second programming process comprises; programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage, wherein the first program voltage and the second program voltage are different. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A memory storage device, comprising:
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a connection interface unit configured to couple to a host system; a rewritable non-volatile memory module comprising a plurality of memory cells; and a memory control circuit unit coupled to the connection interface unit and the rewritable non-volatile memory module, wherein the memory control circuit unit is configured to transmit a first write command sequence configured to instruct to perform a first programming process on the memory cells according to write data, wherein the memory control circuit unit is further configured to obtain a first programming result of the first programming process, wherein the memory control circuit unit is further configured to group the memory cells into a plurality of programming groups according to the first programming result, wherein the memory control circuit unit is further configured to transmit a second write command sequence configured to instruct to perform a second programming process on the memory cells according to the write data, wherein the second programming process comprises; programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage, wherein the first program voltage and the second program voltage are different. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
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17. A memory control circuit unit configured to control a rewritable non-volatile memory module having a plurality of memory cells, the memory control circuit unit comprising:
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a host interface configured to couple to a host system; a memory interface configured to couple to the rewritable non-volatile memory module; and a memory management circuit coupled to the host interface and the memory interface, wherein the memory management circuit is configured to transmit a first write command sequence configured to instruct to perform a first programming process on the memory cells according to write data, wherein the memory management circuit is further configured to obtain a first programming result of the first programming process, wherein the memory management circuit is further configured to group the memory cells into a plurality of programming groups according to the first programming result, wherein the memory management circuit is further configured to transmit a second write command sequence configured to instruct to perform a second programming process on the memory cells according to the write data, wherein the second programming process comprises; programming a first programming group among the programming groups by using a first program voltage; and programming a second programming group among the programming groups by using a second program voltage, wherein the first program voltage and the second program voltage are different. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24)
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Specification