Package Structures and Methods of Forming the Same

• US 20160240508A1
• Filed: 04/24/2015
• Published: 08/18/2016
• Est. Priority Date: 02/13/2015
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Hou, Hao-Cheng, Liu, Ming-Che, Chuang, Chun-Chih, Cheng, Jung Wei, Wang, Tsung-Ding, Lin, Hung-Jen
• Granted Patent: US 9,564,416 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 21/56 Encapsulations, e.g. encapsulation layers, coatings
• CPC Class Codes: H01L 21/568 Temporary substrate used as encapsulation process aid H01L21/4832 and H01L21/566 take precedence
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 21/76877 Filling of holes, grooves or trenches, e.g. vias, with conductive material
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/81005 being a temporary or sacrificial substrate
• CPC Class Codes: H01L 2224/81815 Reflow soldering
• CPC Class Codes: H01L 2224/92125 the second connecting process involving a layer connector
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV] manufacturing via connections per se H01L21/76898
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49811 Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/5226 Via connections in a multilevel interconnection structure
• CPC Class Codes: H01L 23/528 : Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 23/5389 : the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/20 : Structure, shape, material or disposition of high density interconnect preforms
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/16251 : Connecting to an item not being a semiconductor or solid-state body, e.g. cap-to-substrate
• CPC Class Codes: H01L 2924/18161 : of a flip chip
• CPC Class Codes: H01L 2924/18162 : of a chip with build-up interconnect

Abstract

Packages structure and methods of forming them are discussed. A structure includes a first die, a first encapsulant at least laterally encapsulating the first die, and a redistribution structure on the first die and the first encapsulant. The second die is attached by an external electrical connector to the redistribution structure. The second die is on an opposite side of the redistribution structure from the first die. A second encapsulant is on the redistribution structure and at least laterally encapsulates the second die. The second encapsulant has a surface distal from the redistribution structure. A conductive feature extends from the redistribution structure through the second encapsulant to the surface of the second encapsulant. A conductive pillar is on the conductive feature, and the conductive pillar protrudes from the surface of the second encapsulant.

Claims

1. A structure comprising:

a first die having a first active side;

a first encapsulant at least laterally encapsulating the first die;

a redistribution structure on the first encapsulant and the first active side of the first die;

a second die having a second active side, the second active side of the second die being attached by a first external electrical connector to the redistribution structure, the second die being on an opposite side of the redistribution structure from the first die;

a second encapsulant on the redistribution structure and at least laterally encapsulating the second die, the second encapsulant having a first surface distal from the redistribution structure;

a conductive feature extending from the redistribution structure through the second encapsulant to the first surface of the second encapsulant; and

a first conductive pillar on the conductive feature, the first conductive pillar protruding from the first surface of the second encapsulant.

2. The structure of claim 1, wherein the conductive feature is a second conductive pillar extending from the redistribution structure to the first surface of the second encapsulant.

3. The structure of claim 1, wherein the conductive feature comprises a second conductive pillar on the redistribution structure and a via extending from the second conductive pillar to the first surface of the second encapsulant.

4. The structure of claim 3, wherein the via is defined by an opening extending from the first surface of the second encapsulant to the second conductive pillar, the via comprising a conductive material fully filling the opening.

5. The structure of claim 3, wherein the via comprises a conductive material and a filler material different from the conductive material.

6. The structure of claim 1, wherein the first external electrical connector comprises a second conductive pillar on the redistribution structure, and the conductive feature comprises a third conductive pillar on the redistribution structure, a first width of the second conductive pillar being less than a second width of the third conductive pillar.

7. The structure of claim 1, wherein the first conductive pillar is attached to a substrate by solder.

8. The structure of claim 1, wherein the second die is one of a stack of dies.

9. A structure comprising:

a package component comprising a redistribution structure on an encapsulated first die;

first conductive pillars on the redistribution structure at least laterally encapsulated by a first encapsulant;

a second die on the redistribution structure at least laterally encapsulated by the first encapsulant, the first encapsulant having a first surface distal from the redistribution structure; and

second conductive pillars protruding from the first surface of the first encapsulant, each of the second conductive pillars being electrically coupled to a respective one of the first conductive pillars.

10. The structure of claim 9, wherein the first conductive pillars extend from the redistribution structure to the first surface of the encapsulant.

11. The structure of claim 9 further comprising vias in the first encapsulant, each via extending from a respective one of the first conductive pillars to a respective one of the second conductive pillars.

12. The structure of claim 9, wherein each via comprises a conductive material and a filler material different from the conductive material, the conductive material at least laterally surrounding the filler material.

13. The structure of claim 9, wherein the second die is attached to the redistribution structure using third conductive pillars, a width of the third conductive pillars being less than a width of the first conductive pillars.

14. The structure of claim 9, wherein the second die is one of stacked dies.

15. A method comprising:

encapsulating a first die with a first encapsulant;

forming a redistribution structure on the first die and the first encapsulant;

forming a first conductive pillar on the redistribution structure and in a central region of the redistribution structure;

forming a second conductive pillar on the redistribution structure and in a periphery region of the redistribution structure, a width of the first conductive pillar being less than a width of the second conductive pillar;

attaching a second die to the redistribution structure using the first conductive pillar;

at least laterally encapsulating the second die and the second conductive pillar with a second encapsulant; and

after encapsulating the second die and the second conductive pillar, forming a third conductive pillar electrically coupled to the second conductive pillar.

16. The method of claim 15, wherein each of the forming the first conductive pillar, the forming the second conductive pillar, and the forming the third conductive pillar comprises using a plating process.

17. The method of claim 15, wherein the third conductive pillar is formed directly on the second conductive pillar.

18. The method of claim 15 further comprising:

forming an opening through the encapsulant exposing the second conductive pillar; and

forming a via in the openings, the via comprising a conductive material, the third conductive pillar being formed directly on the via.

19. The method of claim 18, wherein the conductive material completely fills the opening.

20. The method of claim 18, wherein the forming the via comprises:

forming the conductive material along a sidewall surface of the opening and a bottom surface of the opening, wherein an unfilled portion of the opening remains unfilled; and

forming a filler material in the unfilled portion of the opening, the filler material being a different material than the conductive material.