SEMICONDUCTOR FINGERPRINT IDENTIFICATION SENSOR AND MANUFACTURING METHOD THEREOF

• US 20160247009A1
• Filed: 11/21/2014
• Published: 08/25/2016
• Est. Priority Date: 07/04/2014
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd.
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: LU, Jianing
• Granted Patent: US 10,242,242 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G06F 18/00 Pattern recognition
• CPC Class Codes: G06V 40/1306 non-optical, e.g. ultrasonic or capacitive sensing
• CPC Class Codes: G06V 40/1329 Protecting the fingerprint sensor against damage caused by the finger
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/11462 Electroplating
• CPC Class Codes: H01L 2224/16113 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/16235 the bump connector connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/16237 the bump connector connecting to a bonding area disposed in a recess of the surface of the item
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/4985 Flexible insulating substrates H01L23/49572 and H01L23/49855 take precedence
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/17 of a plurality of bump connectors
• CPC Class Codes: H01L 24/81 using a bump connector
• CPC Class Codes: H01L 2924/15153 the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H01L 2924/15192 Resurf arrangement of the internal vias

Abstract

Disclosed are a semiconductor fingerprint identification sensor and a method for manufacturing the same. The semiconductor fingerprint identification sensor includes: a sensing area, a control area and an interface area; the sensing area, the control area and the interface area are communicated with one another; a fingerprint information sensed in the sensing area is sent to the control area, and is output through the interface area after being processed in the control area; the sensing area includes an insulation layer, an wiring layer, a substrate layer and a protective layer which are stacked in a sequence, the wiring layer is embedded between the insulation layer and the substrate layer, a sensor array is disposed on a side of the substrate layer being in contact with the protective layer, a via hole corresponding to the sensor array is disposed on the substrate layer, the sensor array is electrically connected with a sensing lead circuit of the wiring layer through the via hole. The semiconductor fingerprint identification sensor has advantages of low cost, high signal-to-noise ratio and good reliability.

Claims

1. A semiconductor fingerprint identification sensor, comprising:

a sensing area, a control area and an interface area;

wherein the sensing area, the control area and the interface area are communicated with one another;

a fingerprint information sensed in the sensing area is sent to the control area, and is output through the interface area after being processed in the control area;

the sensing area comprises an insulation layer, an wiring layer, a substrate layer and a protective layer which are stacked in a sequence, the wiring layer is embedded between the insulation layer and the substrate layer, a sensor array is disposed on a side of the substrate layer being in contact with the protective layer, a via hole which corresponds to the sensor array is disposed on the substrate layer, the sensor array is electrically connected with a sensing lead circuit of the wiring layer through the via hole.

2. The semiconductor fingerprint identification sensor according to claim 1, wherein the insulation layer and the substrate layer are made from a flexible insulating material.

3. The semiconductor fingerprint identification sensor according to claim 1, wherein the sensor array is made from a high conductivity material.

4. The semiconductor fingerprint identification sensor according to claim 1, wherein the protective layer is made from a material with a high dielectric constant and high hardness.

5. The semiconductor fingerprint identification sensor according to claim 1, wherein the control area comprises an insulation layer, an wiring layer and a substrate layer which are stacked in a sequence, the wiring layer is embedded between the insulation layer and the substrate layer;

a plurality of bonding joints are disposed on a side of the substrate layer away from the insulation layer, a bonding pad is composed of a plurality of bonding joints, bonding pad via holes which corresponds to the bonding joints are disposed on the substrate layer, the bonding joints are electrically connected with a sensing lead circuit of the wiring layer through the bonding pad via holes.

6. The semiconductor fingerprint identification sensor according to claim 1, wherein a fingerprint identification sensor integrated circuit is welded in the control area.

7. The semiconductor fingerprint identification sensor according to claim 1, wherein the interface area comprises an insulation layer, an wiring layer and a substrate layer which are stacked in a sequence, the wiring layer is embedded between the insulation layer and the substrate layer, a plurality of interface contacts are disposed on a side of the substrate layer away from the insulation layer, interface via holes which correspond to the interface contacts are disposed on the substrate layer, the interface contacts are electrically connected with a sensing lead circuit of the wiring layer through the interface via holes.

8. The semiconductor fingerprint identification sensor according to claim 1, further comprising:

an electro-static discharge loop, wherein the electro-static discharge loop surrounds the sensing area.

9. The semiconductor fingerprint identification sensor according to claim 8, wherein the electro-static discharge loop comprises a notch.

14. The semiconductor fingerprint identification sensor according to claim 5, further comprising:

an electro-static discharge loop, wherein the electro-static discharge loop surrounds the sensing area.

15. The semiconductor fingerprint identification sensor according to claim 6, further comprising:

an electro-static discharge loop, wherein the electro-static discharge loop surrounds the sensing area.

16. The semiconductor fingerprint identification sensor according to claim 7, further comprising:

an electro-static discharge loop, wherein the electro-static discharge loop surrounds the sensing area.

10. A method for manufacturing a semiconductor fingerprint identification sensor, comprising:

cutting a flexible substrate;

drilling a through hole on the flexible substrate, and forming a metal layer on a surface of the flexible substrate, such that an electrically conductive via hole is formed by metalizing the through hole;

forming a photosensitive film layer on the metal layer, and forming a sensing lead circuit of a wiring layer by a pattern process;

coating an insulation layer on the sensing lead circuit;

electroplating a sensor array, an integrated circuit bonding pad and an interface contact on a surface of the flexible substrate away from the wiring layer to form a sensing area, a control area and an interface area respectively; and

forming a protective layer on a top surface of the flexible substrate.

11. The method for manufacturing the semiconductor fingerprint identification sensor according to claim 10, wherein the insulation layer and the flexible substrate are made from a flexible insulating material.

12. The method for manufacturing the semiconductor fingerprint identification sensor according to claim 10, wherein the sensor array is made from a high conductivity material.

13. The method for manufacturing the semiconductor fingerprint identification sensor according to claim 10, wherein the protective layer is made from a material with a high dielectric constant and high hardness.