MATERIAL PROCESSING TO ACHIEVE SUB-10NM PATTERNING

• US 20160247680A1
• Filed: 02/20/2015
• Published: 08/25/2016
• Est. Priority Date: 02/20/2015
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: O'Meara, David L., Raley, Angelique D., Ko, Akiteru, Ito, Kiyohito
• Granted Patent: US 9,443,731 B1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01L 21/0337 characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31144 using masks
• CPC Class Codes: H01L 21/32105 Oxidation of silicon-containing layers
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

Provided is a method for increasing pattern density on a substrate comprising a structure with a patterned layer with a first composition and a sidewall and a cap layer of a second composition formed atop said structure. The sidewall is exposed to a chemical environment and creates a chemically modified sidewall layer of a third composition. The cap layer and an interior, non-modified portion of said structure is removed using an etching process to leave behind said chemically modified sidewall layer. A pattern transfer etch of said sidewall chemically modified layer onto the underlying layer of said substrate is performed. One or more integration operating variables are controlled to achieve target critical dimensions comprising width, height, sidewall angle, line width roughness, and/or line edge roughness of said structure.

Claims

1. A method for increasing pattern density of a structure on a substrate using an integration scheme, said integration scheme having one or more integration operating variables, the method comprising:

providing a substrate having a patterned layer of a first composition in a process chamber, said patterned layer comprising at least one structure with a sidewall and a top surface;

exposing said sidewall and top surface to a chemical environment to chemically modify said sidewall and top surface of said structure to a predetermined depth by introducing a constituent of said chemical environment to an exposed surface region of said structure and creating a chemically modified sidewall layer and cap layer of a second composition; and

removing said cap layer to expose an interior, non-modified portion of said structure;

selectively removing said interior, non-modified portion of said structure to leave behind said chemically modified sidewall layer;

selecting said chemical environment to include said constituent that modifies an etch resistance of said chemically modified sidewall layer to a class of etching agents used in said selectively removing said interior, non-modified portion, said second composition being more resistant to said class of etching agents than said first composition; and

performing a pattern transfer etch of said chemically modified sidewall layer onto an underlying layer of said substrate;

wherein said one or more integration operating variables comprises a hydrogen, oxygen, and nitrogen ratio, a process chamber temperature, a thickness of said chemically modified sidewall layer, a water vapor partial pressure, and an exposure time to said chemical environment.

2. The method of claim 1, further comprising:

controlling selected one or more integration operating variables in order to achieve one or more target critical dimensions of said structure, said one or more target critical dimensions (CD) comprising width, height, and/or line edge roughness of said structure.

3. The method of claim 2, wherein providing said substrate comprises providing a substrate fabricated using lithography, self-aligned double patterning (SADP), or directed self-assembly (DSA).

4. The method of claim 3, wherein the exposing said sidewall and top surface, removing said cap layer, selectively removing said interior, non-modified portion of said structure, and performing said pattern transfer etch of said chemically modified sidewall layer onto the underlying layer of said substrate are all done in situ in said process chamber.

5. The method of claim 4, wherein said process chamber uses a high density plasma generated using a power source including inductive coupled plasma (ICP), radial line slot antenna (RLSA), or electron cyclotron resonance (ECR) devices.

6. The method of claim 4:

wherein removing said cap layer utilizes a plasma chemistry using carbon tetrafluoride, oxygen, and argon or silicon hexafluoride, oxygen, and helium; and

/or

wherein said substrate includes a stop layer, the stop layer comprising silicon oxynitride, silicon nitride, or titanium nitride.

7. The method of claim 4;

wherein said chemical environment comprises an oxygen-containing environment to provide oxygen as said constituent, a nitrogen-containing environment to provide nitrogen as said constituent, or a dopant-containing environment to provide dopant as said constituent;

wherein if said chemical environment comprises said oxygen-containing environment, said oxygen-containing environment comprises oxygen, carbon monoxide, carbon dioxide, and/or nitrogen dioxide;

or

wherein if said chemical environment comprises said nitrogen-containing environment, said nitrogen-containing environment comprises nitrogen, ammonia and/or hydrazine;

or

wherein if said chemical environment comprises said dopant-containing environment, said dopant-containing environment comprises borane, diborane, phosphine, and/or arsine.

8. The method of claim 7;

wherein a ratio of hydrogen, oxygen, and nitrogen is in a range from 0/50/9,000 to 300/400/11,000 and/or said temperature of said process chamber is in a range from 700 to 1200°

C.

9. The method of claim 7:

wherein said cap layer is an oxide layer of thickness in a range from 0.01 to 1.05 nm, said water vapor partial pressure is in a range from 0.10 to 1.00 Torr, and/or said exposure time is in a range from 0.02 to 50 hr.

10. The method of claim 7:

wherein said thickness of said chemically modified sidewall layer is one of 9.0 nm or less, 7.0 nm or less;

or 5 nm or less.

11. A method for increasing pattern density of a structure on a substrate using an integration scheme, said integration scheme having one or more integration operating variables, the method comprising:

providing a substrate having a patterned layer in a process chamber, said patterned layer comprising at least one mandrel, said mandrel comprising organic planarizing spin-on material, silicon nitride, or photoresist fabricated using a self-aligned double patterning scheme;

depositing a conformal spacer layer on said patterned layer;

performing a spacer reactive ion etching (RIE) sequence using silicon etching chemistry;

performing a mandrel-pull strip sequence using a stripping technique based on material used for said mandrel, said mandrel-pull strip sequence generating a spacer with a sidewall and a top surface;

exposing said sidewall and top surface to a chemical environment to chemically modify said sidewall and top surface to a predetermined depth, creating a chemically modified sidewall layer and cap layer;

removing said cap layer and bottom portion of the substrate proximate to said spacer;

performing a spacer-pull etch sequence configured to remove a non-modified portion of said spacer using at least one etching process to leave behind said chemically modified sidewall layer; and

performing a pattern transfer etch sequence of said chemically modified sidewall layer onto an underlying layer of said substrate;

wherein said one or more integration operating variables comprises a hydrogen, oxygen, and nitrogen ratio, a process chamber temperature, a thickness of said sidewall chemically modified layer, a water vapor partial pressure, a thickness of said cap layer, and an exposure time to said chemical environment.

12. The method of claim 11, further comprising:

controlling selected one or more integration operating variables in order to achieve one or more target critical dimensions of said structure, said one or more target critical dimensions comprising width, height, or line edge roughness of said structure.

13. The method of claim 12, wherein depositing said conformal spacer layer, exposing said sidewall and top surface, performing said mandrel-pull strip sequence, removing said cap layer, performing said spacer-pull etch sequence, and performing said pattern transfer etch sequence of said layer onto the underlying layer of said substrate are all done in situ in said process chamber.

14. The method of claim 13:

wherein performing said mandrel-pull strip sequence using said stripping technique based on material used for said mandrel utilizes an in situ plasma strip if said mandrel is made of organic material or a wet strip using hot phosphoric acid if said mandrel is made of silicon nitride; and

/or

wherein a plasma chamber uses a high density plasma generated using a power source including inductive coupled plasma (ICP), radial line slot antenna (RLSA), or electron cyclotron resonance (ECR) devices.

15. The method of claim 14, wherein performing said spacer RIE sequence utilizes a first set of RIE chemicals including hydrogen bromide, oxygen, and argon or a second set of RIE chemicals including chlorine, oxygen, and argon or a combination of the first set and second set of RIE chemicals with additional gases to get a desired spacer profile.

16. The method of claim 14:

wherein said mandrel comprises organic planarizing spin-on material, silicon nitride or photoresist that is fabricated using a self-aligned quad or octo-patterning scheme; and

/or

wherein said self-aligned quad or octo-patterning scheme is combined or is not combined with extreme ultra violet (EUV) lithography.

17. The method of claim 14

wherein said chemical environment comprises an oxygen containing environment or a nitrogen containing environment;

wherein said oxygen-containing environment comprises oxygen, carbon monoxide, carbon dioxide, and/or nitrogen dioxide; and

wherein said nitrogen-containing environment comprises nitrogen, ammonia and/or hydrazine.

18. The method of claim 17:

wherein removing said cap layer utilizes a plasma chemistry using carbon tetrafluoride, oxygen, and argon or silicon hexafluoride, oxygen, and helium; and

/or

wherein said substrate includes a stop layer, said stop layer comprising silicon oxynitride, silicon nitride, or titanium nitride.

19. The method of claim 17

wherein a ratio of hydrogen, oxygen, and nitrogen is in a range from 0/50/9,000 to 300/400/11,000 and/or

wherein said process chamber temperature is in a range from 700 to 1200°

C.

20. The method of claim 17:

wherein said cap layer is an oxide layer of thickness in a range from 0.01 to 1.05 nm, said water vapor partial pressure is in a range from 0.10 to 1.00 Torr, said exposure time is in a range from 0.02 to 50 hr; and

/or

wherein said thickness of said chemically modified sidewall layer is one of 9.0 nm or less, 7.0 nm or less;

or 5 nm or less.