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MATERIAL PROCESSING TO ACHIEVE SUB-10NM PATTERNING

  • US 20160247680A1
  • Filed: 02/20/2015
  • Published: 08/25/2016
  • Est. Priority Date: 02/20/2015
  • Status: Active Grant
First Claim
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1. A method for increasing pattern density of a structure on a substrate using an integration scheme, said integration scheme having one or more integration operating variables, the method comprising:

  • providing a substrate having a patterned layer of a first composition in a process chamber, said patterned layer comprising at least one structure with a sidewall and a top surface;

    exposing said sidewall and top surface to a chemical environment to chemically modify said sidewall and top surface of said structure to a predetermined depth by introducing a constituent of said chemical environment to an exposed surface region of said structure and creating a chemically modified sidewall layer and cap layer of a second composition; and

    removing said cap layer to expose an interior, non-modified portion of said structure;

    selectively removing said interior, non-modified portion of said structure to leave behind said chemically modified sidewall layer;

    selecting said chemical environment to include said constituent that modifies an etch resistance of said chemically modified sidewall layer to a class of etching agents used in said selectively removing said interior, non-modified portion, said second composition being more resistant to said class of etching agents than said first composition; and

    performing a pattern transfer etch of said chemically modified sidewall layer onto an underlying layer of said substrate;

    wherein said one or more integration operating variables comprises a hydrogen, oxygen, and nitrogen ratio, a process chamber temperature, a thickness of said chemically modified sidewall layer, a water vapor partial pressure, and an exposure time to said chemical environment.

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