REMOVAL OF SURFACE PASSIVATION
First Claim
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1. A method for removing a passivation film from a substrate, the method comprising:
- providing the substrate comprising a passivation film on a metal surface, wherein the passivation film was formed by exposure of the metal surface to a passivation agent comprising a hydrocarbon; and
exposing the passivation film to a vapor phase organic reactant at a temperature of 100°
C. to 400°
C., wherein the passivation film is not exposed to a plasma during exposure of the passivation film to the vapor phase organic reactant.
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Abstract
Methods for removing a passivation film from a copper surface can include exposing the passivation film to a vapor phase organic reactant, for example at a temperature of 100° C. to 400° C. In some embodiments, the passivation film may have been formed by exposure of the copper surface to benzotriazole, such as can occur during a chemical mechanical planarization process. The methods can be performed as part of a process for integrated circuit fabrication. A second material can be selectively deposited on the cleaned copper surface relative to another surface of the substrate.
61 Citations
21 Claims
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1. A method for removing a passivation film from a substrate, the method comprising:
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providing the substrate comprising a passivation film on a metal surface, wherein the passivation film was formed by exposure of the metal surface to a passivation agent comprising a hydrocarbon; and exposing the passivation film to a vapor phase organic reactant at a temperature of 100°
C. to 400°
C., wherein the passivation film is not exposed to a plasma during exposure of the passivation film to the vapor phase organic reactant. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for integrated circuit fabrication, comprising:
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providing a substrate comprising a passivation film on a copper surface that was subjected to a chemical mechanical planarization process; performing a cleaning process for removing the passivation film from the copper surface, wherein performing the cleaning process comprises; contacting the passivation film with a vapor phase organic reactant at a process temperature of 100°
C. to 400°
C.,wherein the vapor phase organic reactant has the formula R—
COOH, the R being a hydrogen, or a C1-C3 alkyl, andwherein the cleaning process is substantially free of plasma activated reactants. - View Dependent Claims (10, 11, 12, 13)
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14. A method of integrated circuit fabrication, comprising:
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cleaning a copper surface of a substrate by removing a passivation film that was formed on the copper surface by exposure to a hydrocarbon passivation agent, wherein cleaning comprises contacting the passivation film with a vapor phase organic reactant substantially without exposing the substrate to a plasma; and selectively depositing a second material on the cleaned copper surface relative to a second surface on the substrate. - View Dependent Claims (15, 16, 17, 18, 19, 20, 21)
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Specification