BONDED SYSTEM AND A METHOD FOR ADHESIVELY BONDING A HYGROSCOPIC MATERIAL

• US 20160247739A1
• Filed: 02/18/2016
• Published: 08/25/2016
• Est. Priority Date: 02/23/2015
• Status: Active Grant

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Von Waechter, Claus, Altschaeffl, Christian, Muehlbauer, Franz Xaver, Doepke, Holger, Hoeckele, Uwe, Porwol, Daniel, Schmidt, Tobias, Schweiger, Christian, Von Koblinski, Carsten
• Granted Patent: US 10,332,814 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/12105 Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
• CPC Class Codes: H01L 23/26 including materials for absorbing or reacting with moisture or other undesired substances , e.g. getters
• CPC Class Codes: H01L 23/3135 Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/564 Details not otherwise provided for, e.g. protection against moisture getters H01L23/26
• CPC Class Codes: H01L 24/96 the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
• CPC Class Codes: H01L 24/97 the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
• CPC Class Codes: H01L 2924/3025 Electromagnetic shielding

Abstract

A bonded system includes a reconstituted wafer including a hygroscopic material. A moisture barrier layer is arranged over a surface of the reconstituted wafer. An adhesive layer is arranged over a surface of the moisture barrier opposite the reconstituted wafer. A carrier is arranged over a surface of the adhesive layer opposite the moisture barrier. The adhesive layer adhesively bonds the reconstituted wafer and the carrier together.

Claims

1. A bonded system, comprising:

a reconstituted wafer comprising a hygroscopic material;

a moisture barrier arranged over a surface of the reconstituted wafer;

an adhesive layer arranged over a surface of the moisture barrier opposite the reconstituted wafer; and

a carrier arranged over a surface of the adhesive layer opposite the moisture barrier, wherein the adhesive layer adhesively bonds the reconstituted wafer and the carrier together.

2. The bonded system of claim 1, wherein the hygroscopic material comprises a mold compound.

3. The bonded system of claim 1, wherein the moisture barrier comprises at least one of an oxide layer, a nitride layer, a carbide layer.

4. The bonded system of claim 3, wherein the moisture barrier has a thickness of 200 nm to 3000 nm.

5. The bonded system of claim 3, wherein the moisture barrier has a thickness of 2 micrometer to 3 micrometer.

6. The bonded system of claim 1, wherein the moisture barrier comprises a metal layer.

7. The bonded system of claim 6, wherein the moisture barrier has a thickness of 20 nm to 1000 nm.

8. The bonded system of claim 1, wherein the moisture barrier completely encloses the reconstituted wafer.

9. The bonded system of claim 8, wherein the moisture barrier is partially opened to allow a contacting of semiconductor chips comprised in the reconstituted wafer.

10. A method for bonding a reconstituted wafer to a carrier, the method comprising:

providing a reconstituted wafer comprising a hygroscopic material;

applying a moisture barrier over a surface of the reconstituted wafer;

applying an adhesive layer over a surface of the moisture barrier opposite the reconstituted wafer;

arranging a carrier over a surface of the adhesive layer opposite the moisture barrier; and

adhesively bonding the reconstituted wafer and the carrier together.

11. The method of claim 10, wherein the moisture barrier is applied by chemical vapor deposition.

12. The method of claim 10, wherein the moisture barrier is applied by a sputtering process.

13. The method of one of claims 10, further comprising:

applying the moisture barrier to all surfaces of the reconstituted wafer.

14. The method of claim 13, further comprising:

partially removing the moisture barrier to expose contact areas of semiconductor chips comprised in the reconstituted wafer.

15. The method of claim 10, further comprising:

drying the reconstituted wafer prior to applying the moisture barrier.

16. The method of claim 15, wherein drying the reconstituted wafer is effectuated in a nitrogen atmosphere.

17. A method for adhesively bonding a hygroscopic material to a substrate, the method comprising:

providing a moisture barrier to a surface of the hygroscopic material to be bonded prior to adhesively bonding the hygroscopic material to the substrate.