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Integrated Circuit Devices and Methods of Manufacturing the Same

  • US 20160247876A1
  • Filed: 12/11/2015
  • Published: 08/25/2016
  • Est. Priority Date: 02/24/2015
  • Status: Active Grant
First Claim
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1. An integrated circuit device comprising:

  • a first fin-type active region in a first region of a substrate, the first fin-type active region having a first conductive type channel region;

    a first device isolation layer covering both sidewalls of a lower portion of the first fin-type active region;

    a second fin-type active region in a second region of the substrate, the second fin-type active region having a second conductive type channel region; and

    a second device isolation laser covering both sidewalls of a lower portion of the second fin-type active region;

    wherein the first device isolation layer and the second device isolation layer have different stack structures.

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