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TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS

  • US 20160247879A1
  • Filed: 02/23/2016
  • Published: 08/25/2016
  • Est. Priority Date: 02/23/2015
  • Status: Abandoned Application
First Claim
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1. A trench semiconductor device comprising:

  • a layer of semiconductor material;

    an exterior trench pattern formed in the layer of semiconductor material, the exterior trench pattern including a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material; and

    an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern, the interior trench pattern including a plurality of first interior trench portions and a plurality of second interior trench portions that are each lined with dielectric material and filled with conductive material, the plurality of first interior trench portions being arranged perpendicular to the plurality of second interior trench portions with each of the plurality of first interior trench portions being connected to at least one of the plurality of second interior trench portions.

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