TRENCH SEMICONDUCTOR DEVICE LAYOUT CONFIGURATIONS
First Claim
Patent Images
1. A trench semiconductor device comprising:
- a layer of semiconductor material;
an exterior trench pattern formed in the layer of semiconductor material, the exterior trench pattern including a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material; and
an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern, the interior trench pattern including a plurality of first interior trench portions and a plurality of second interior trench portions that are each lined with dielectric material and filled with conductive material, the plurality of first interior trench portions being arranged perpendicular to the plurality of second interior trench portions with each of the plurality of first interior trench portions being connected to at least one of the plurality of second interior trench portions.
1 Assignment
0 Petitions
Accused Products
Abstract
A trench semiconductor device includes a layer of semiconductor material, an exterior trench pattern formed in the layer of semiconductor material, and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern. The exterior trench pattern includes a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material, and the interior trench pattern including a plurality of interior trench portions that are each lined with dielectric material and filled with conductive material.
-
Citations
14 Claims
-
1. A trench semiconductor device comprising:
-
a layer of semiconductor material; an exterior trench pattern formed in the layer of semiconductor material, the exterior trench pattern including a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material; and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern, the interior trench pattern including a plurality of first interior trench portions and a plurality of second interior trench portions that are each lined with dielectric material and filled with conductive material, the plurality of first interior trench portions being arranged perpendicular to the plurality of second interior trench portions with each of the plurality of first interior trench portions being connected to at least one of the plurality of second interior trench portions. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
-
11. A trench semiconductor device comprising:
-
a layer of semiconductor material; an exterior trench pattern formed in the layer of semiconductor material, the exterior trench pattern including a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material; and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern, the interior trench pattern including a plurality of interior trench portions that are each lined with dielectric material and filled with conductive material, arranged at angles to each other and connected to each other to form a plurality of six sided polygons. - View Dependent Claims (12, 13)
-
-
14. A trench semiconductor device comprising:
-
a layer of semiconductor material; an exterior trench pattern formed in the layer of semiconductor material, the exterior trench pattern including a plurality of exterior trench portions that are each lined with dielectric material and filled with conductive material, the plurality of exterior trench portions being formed as a plurality of separated exterior trench segments; and an interior trench pattern formed in the layer of semiconductor material, at least partially surrounded by the exterior trench pattern, the interior trench pattern including a plurality of interior trench portions that are each lined with dielectric material and filled with conductive material, the plurality of interior trench portions being formed as a plurality of parallel vertical trench legs.
-
Specification