LIGHT EMITTING DIODE

• US 20160247971A1
• Filed: 05/03/2016
• Published: 08/25/2016
• Est. Priority Date: 09/26/2014
• Status: Active Grant

• Current Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Original Assignee: Seoul Viosys Co., Ltd. (Seoul Semiconductor Co., Ltd.)
• Inventors: LEE, Joon Hee, Lee, Mi Hee
• Granted Patent: US 11,264,540 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body
• CPC Class Codes: H01L 33/405 Reflective materials

Abstract

A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.

Claims

1. A light emitting diode, comprising:

a light emitting structure comprising;

a second conductive type semiconductor layer;

a first conductive type semiconductor layer disposed on the second conductive type semiconductor layer; and

an active layer disposed between the first and second conductive type semiconductor layers;

a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer;

a reflective metal layer disposed on the light emitting structure and contacting a portion of the light emitting structure;

a cover metal layer disposed on the reflective metal layer and contacting at least a portion of the reflective metal layer;

a first insulation layer disposed on the cover metal layer and covering the reflective metal layer and the cover metal layer;

an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole;

an electrode pad disposed on the light emitting structure; and

a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer,

wherein the electrode pad overlaps the cover metal layer.

2. The light emitting diode according to claim 1, further comprising:

a pad installation section spaced apart from the light emitting structure by the first hole,

wherein the cover metal layer is disposed on a portion of the light emitting structure and a portion of the pad installation section.

3. The light emitting diode according to claim 2, wherein the cover metal layer is disposed along peripheries of the light emitting structure and the pad installation section.

4. The light emitting diode according to claim 3, wherein the cover metal layer covers a periphery of the reflective metal layer.

5. The light emitting diode according to claim 1, wherein the electrode layer fills the second hole and ohmic contacts with the first conductive type semiconductor layer.

6. The light emitting diode according to claim 1, wherein a region of the first insulation layer in which the second hole is not formed is disposed on the reflective metal layer.

7. A light emitting diode, comprising:

a light emitting structure comprising;

a second conductive type semiconductor layer;

a first conductive type semiconductor layer disposed on the second conductive type semiconductor layer; and

an active layer disposed between the first and second conductive type semiconductor layers;

a first hole and a second hole formed through the active layer and the second conductive type semiconductor layer to expose the first conductive type semiconductor layer;

a metal layer disposed on the light emitting structure and covering a portion of the light emitting structure;

a first insulation layer disposed on the metal layer and covering the metal layer;

an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the first and second holes; and

an electrode pad electrically connected to the metal layer,

wherein the electrode layer filling the second hole is a line electrode, the line electrode being disposed along a periphery of the light emitting structure in one direction.

8. The light emitting diode according to claim 7, wherein:

the electrode layer filling the first hole is a first electrode; and

the line electrode has a smaller width than the first electrode.

9. The light emitting diode according to claim 7, wherein the metal layer is disposed inside the line electrode in plan view.

10. The light emitting diode according to claim 7, wherein the line electrode is disposed on the light emitting structure in a region in which the electrode pad is not formed.