LIGHT-EMITTING DIODE CHIP

• US 20160247972A1
• Filed: 02/17/2016
• Published: 08/25/2016
• Est. Priority Date: 02/17/2015
• Status: Abandoned Application

• Current Assignee: Genesis Photonics Inc.
• Original Assignee: Genesis Photonics Inc.
• Inventors: Kuo, Yu-Chen, Lai, Teng-Hsien, Kang, Kai-Shun, Lan, Yan-Ting, Huang, Jing-En
• Application Number:
  US15/045,263
• Publication Number:
  US 20160247972A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 33/145 with a current-blocking structure
• CPC Class Codes: H01L 33/20 with a particular shape, e.g. curved or truncated substrate
• CPC Class Codes: H01L 33/38 with a particular shape

Abstract

A light-emitting diode chip including a semiconductor device layer, a first electrode, a current-blocking layer, a current-spreading layer, and a second electrode is provided. The semiconductor device layer includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, and a light-emitting layer located between the first-type and second-type doped semiconductor layers. The first electrode is electrically connected to the first-type doped semiconductor layer. The current-blocking layer is disposed on the second-type doped semiconductor layer, and the current-blocking layer includes a main body and an extension portion extended from the main body. The current-spreading layer covers the current-blocking layer. The second electrode is electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode includes a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion.

Claims

1. A light-emitting diode chip, comprising:

a semiconductor device layer comprising a first-type doped semiconductor layer, a light-emitting layer, and a second-type doped semiconductor layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer;

a first electrode electrically connected to the first-type doped semiconductor layer;

a current-blocking layer disposed on the second-type doped semiconductor layer, and the current-blocking layer comprises a main body and an extension portion extended from the main body;

a current-spreading layer disposed on the second-type doped semiconductor layer to cover the current-blocking layer; and

a second electrode electrically connected to the second-type doped semiconductor layer via the current-spreading layer, wherein the second electrode comprises a bonding pad and a finger portion extended from the bonding pad, the bonding pad is located above the main body, the finger portion is located above the extension portion, and a partial region of the finger portion does not overlap the extension portion.

2. The light-emitting diode chip of claim 1, wherein the light-emitting layer is disposed on the first-type doped semiconductor layer to expose a portion of the first-type doped semiconductor layer, and the first electrode is disposed on the portion of the first-type doped semiconductor layer exposed by the light-emitting layer.

3. The light-emitting diode chip of claim 1, wherein the extension portion comprises a plurality of current-blocking patterns separated from one another, and the current-blocking patterns are arranged along an extending direction of the finger portion.

4. The light-emitting diode chip of claim 1, wherein the extension portion comprises:

a plurality of current-blocking patterns arranged along an extending direction of the finger portion; and

a plurality of connecting patterns, wherein the current-blocking patterns are connected to one another via the connecting patterns.

5. The light-emitting diode chip of claim 4, wherein the connecting patterns overlap the finger portion, and a width of each of the connecting patterns along the extending direction of the finger portion is less than a width of the finger portion.

6. The light-emitting diode chip of claim 4, wherein the connecting patterns do not overlap the finger portion.

7. A light-emitting diode chip, comprising:

a semiconductor device layer comprising a first-type doped semiconductor layer, a light-emitting layer, and a second-type doped semiconductor layer, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer;

a first electrode electrically connected to the first-type doped semiconductor layer;

a current-blocking layer disposed on the second-type doped semiconductor layer, and the current-blocking layer comprises a main body and an extension portion extended from the main body;

a current-spreading layer disposed on the second-type doped semiconductor layer to cover the current-blocking layer; and

a second electrode electrically connected to the second-type doped semiconductor layer, wherein the second electrode comprises a bonding pad and a finger portion extended from the bonding pad, the finger portion is located above the extension portion, the bonding pad passes through the current-spreading layer and the main body, and the bonding pad is in contact with the second-type doped semiconductor layer.

8. The light-emitting diode chip of claim 7, wherein the light-emitting layer is disposed on the first-type doped semiconductor layer to expose a portion of the first-type doped semiconductor layer, and the first electrode is disposed on the portion of the first-type doped semiconductor layer exposed by the light-emitting layer.

9. The light-emitting diode chip of claim 7, wherein a width of the extension portion varies periodically along an extending direction of the finger portion.

10. The light-emitting diode chip of claim 7, wherein a width of the extension portion varies gradually along an extending direction of the finger portion, and a width of the extension portion is greater closer to the first electrode.

11. The light-emitting diode chip of claim 7, wherein the extension portion comprises:

a plurality of current-blocking patterns arranged along an extending direction of the finger portion; and

a plurality of connecting patterns, wherein the current-blocking patterns are connected to one another via the connecting patterns.

12. The light-emitting diode chip of claim 11, wherein the connecting patterns overlap the finger portion, and a width of each of the connecting patterns along the extending direction of the finger portion is greater than or equal to a width of the finger portion.

13. A light-emitting diode chip, comprising:

a substrate;

a semiconductor device layer comprising a first-type doped semiconductor layer, a light-emitting layer, and a second-type doped semiconductor layer, and the first-type doped semiconductor layer is disposed on the substrate, wherein the light-emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer;

a current-spreading layer disposed on the second-type doped semiconductor layer;

a first electrode electrically connected to the first-type doped semiconductor layer;

an insulating layer disposed between the first electrode and the first-type doped semiconductor layer; and

a second electrode electrically connected to the second-type doped semiconductor layer via the current-spreading layer.

14. The light-emitting diode chip of claim 13, wherein the light-emitting layer is disposed on the first-type doped semiconductor layer to expose a portion of the first-type doped semiconductor layer, and the first electrode is disposed on the portion of the first-type doped semiconductor layer exposed by the light-emitting layer.

15. The light-emitting diode chip of claim 13, wherein the first electrode comprises a bonding portion and branched portions extended from the bonding portion, and the bonding portion is disposed above the insulating layer.

16. The light-emitting diode chip of claim 15, wherein the bonding portion covers the insulating layer.

17. The light-emitting diode chip of claim 15, wherein the insulating layer is disposed on the first-type doped semiconductor layer, a portion of the first-type doped semiconductor layer without the insulating layer forms a region, and the branched portions are disposed in the region.

18. The light-emitting diode chip of claim 15, wherein the insulating layer is disposed on the first-type doped semiconductor layer, a portion of the first-type doped semiconductor layer without the insulating layer forms a plurality of regions separated from one another, a portion of the branched portions is disposed in the regions, and the regions are arranged along an extending direction of the branched portions.

19. The light-emitting diode chip of claim 13, wherein the insulating layer is further disposed on the second-type doped semiconductor layer.

20. The light-emitting diode chip of claim 13, wherein the current-spreading layer is further disposed on the first-type doped semiconductor layer to cover the insulating layer.