LIGHT EMITTING DIODE
First Claim
1. A light emitting diode, comprising:
- a first-type semiconductor layer;
an emitting layer, configured to emit a light beam, the light beam has a peak wavelength in a light emitting wavelength range;
a second-type semiconductor layer, wherein the emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer;
a first electrode, electrically connected to the first-type semiconductor layer;
a second electrode, electrically connected to the second-type semiconductor layer; and
a Bragg reflector structure, the first electrode and the second electrode are both located on a same side of the Bragg reflector structure, and a reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, wherein X is the peak wavelength of the light emitting wavelength range.
3 Assignments
0 Petitions
Accused Products
Abstract
A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.
-
Citations
23 Claims
-
1. A light emitting diode, comprising:
-
a first-type semiconductor layer; an emitting layer, configured to emit a light beam, the light beam has a peak wavelength in a light emitting wavelength range; a second-type semiconductor layer, wherein the emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer; a first electrode, electrically connected to the first-type semiconductor layer; a second electrode, electrically connected to the second-type semiconductor layer; and a Bragg reflector structure, the first electrode and the second electrode are both located on a same side of the Bragg reflector structure, and a reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, wherein X is the peak wavelength of the light emitting wavelength range. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
-
Specification