Semiconductor Light Emitting Diode Chip

• US 20160247989A1
• Filed: 03/13/2014
• Published: 08/25/2016
• Est. Priority Date: 11/25/2013
• Status: Active Grant

• Current Assignee: Yangzhou Zhongke Semiconductor Lighting Co., Ltd.
• Original Assignee: Yangzhou Zhongke Semiconductor Lighting Co., Ltd.
• Inventors: Jin, Yuzhe, Feng, Yaping, Zhang, Yi, Li, Jiajia, Li, Zhicong, Sun, Yijun, Wang, Guohong
• Granted Patent: US 9,666,779 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions
• CPC Class Codes: H01L 33/14 with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
• CPC Class Codes: H01L 33/38 with a particular shape
• CPC Class Codes: H01L 33/405 Reflective materials
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A semiconductor light emitting diode chip relates to the field of production technologies of a light emitting diode. In the present invention, corresponding graphical current extension layers are respectively disposed below an N pad and a P pad, and in all light emitting compound areas, there is electronic compound light emitting. Compared with the prior art, an area of a light emitting compound area is increased, which can effectively improve current distribution and light emitting brightness of a chip. In addition, graphical current extension can effectively increase an adhesion of a pad on a surface and improve the reliability of a chip.

Claims

1. A light emitting diode chip, comprising an N-type semiconductor layer, a light emitting compound layer, and a P-type semiconductor layer sequentially disposed on a rectangular substrate, and an N-type semiconductor layer that is exposed in the middle of the P-type semiconductor layer after being etched, wherein P-type semiconductor layers on two sides of the rectangular substrate are respectively provided with a P pad and an N pad;

and a P-type semiconductor layer out of areas of the P pad and the N pad is provided with a current barrier layer, and the current barrier layer is provided with a current extension layer;

P-type semiconductor layers corresponding to the P pad and the N pad are respectively provided with graphical current extension layers, and the graphical current extension layers are respectively provided with electrical-insulating layers; and

the back of the P pad and the back of the N pad are respectively provided with reflectors;

the current extension layer is provided with at least two groups of graphical P extended electrodes, and each of the P extended electrodes is electrically connected to the P pad; and

the N pad is electrically connected to the N extended electrode, the N extended electrode is disposed on and is in contact with an exposed N-type semiconductor layer, and the P extended electrode is in contact with the current extension layer.

2. The light emitting diode chip according to claim 1, wherein the graphical current extension layer is a current extension layer whose surface is of a net-dotted circular hole, and the diameter of the circular hole is less than 10 um.

3. The light emitting diode chip according to claim 1, wherein a narrow side of the rectangular substrate is less than 300 um.

4. The light emitting diode chip according to claim 1, wherein the reflector is a medium layer, an aluminum layer, or a platinum layer.

5. The light emitting diode chip according to claim 1, wherein the electrical-insulating layer is a nitride of aluminum, an oxide of aluminum, an oxide of silicon, or a nitride layer of silicon.