PROCESS FOR PRODUCING CARBON NANOTUBES AND METHOD FOR FORMING WIRING

• US 20160251757A1
• Filed: 05/11/2016
• Published: 09/01/2016
• Est. Priority Date: 11/13/2013
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: NISHIDE, Daisuke, MATSUMOTO, Takashi, KAGAYA, Munehito
• Granted Patent: US 10,378,104 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: C01B 2202/08 Aligned nanotubes
• CPC Class Codes: C01B 32/16 Preparation
• CPC Class Codes: C01B 32/162 characterised by catalysts
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: H01L 21/28556 by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD H01L21/28518 - H01L21/28537 and H01L21/28568 take precedence
• CPC Class Codes: H01L 21/76879 by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating plating on semiconductors in general H01L21/288
• CPC Class Codes: H01L 2221/1094 Conducting structures comprising nanotubes or nanowires
• CPC Class Codes: H01L 23/53276 containing carbon, e.g. fullerenes superconducting fullerenes H10N60/853
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A carbon nanotube producing method, which is capable of realizing a low resistant depth-wise wiring. An acetylene gas is first supplied as a carbon-containing gas and subsequently, an ethylene gas is supplied as the carbon-containing gas such that carbon nanotubes are produced.

Claims

1. A method of producing a carbon nanotube by supplying a carbon-containing gas onto a substrate, comprising:

supplying at least an acetylene gas as the carbon-containing gas at an initial stage of carbon nanotube production; and

supplying at least an ethylene gas as the carbon-containing gas at a termination stage of carbon nanotube production,

wherein the initial stage of carbon nanotube production includes;

a first carbon-containing gas supplying step in which only the acetylene gas as the carbon-containing gas is supplied; and

a second carbon-containing gas supplying step in which at least the ethylene gas as the carbon-containing gas is supplied after the first carbon-containing gas supplying step.

2. The method of claim 1, wherein a temperature of the substrate is set to be equal to or higher than 425 degrees C. and lower than 600 degrees C.

3. The method of claim 1, wherein the temperature of the substrate in the second carbon-containing gas supplying step is set to be higher than the temperature of the substrate in the first carbon-containing gas supplying step.

4. The method of claim 1, wherein, in the second carbon-containing gas supplying step, only the ethylene gas is supplied as the carbon-containing gas.

5. The method of claim 1, wherein, in the second carbon-containing gas supplying step, a mixture of the ethylene gas and the acetylene gas is supplied as the carbon-containing gas.

6. The method of claim 1, wherein a mixture of the ethylene gas and the acetylene gas is supplied as the carbon-containing gas and a temperature of the substrate is set to be equal to or higher than 425 degrees C. and lower than 600 degrees C.

7. The method of claim 6, wherein, when a flow rate ratio of the mixture gas is assumed as 100%, a flow rate ratio of the ethylene gas is set to be equal to or more than 50% and equal to or less than 80%.

8. The method of claim 6, wherein a flow rate ratio of the acetylene gas and the ethylene gas in the mixture gas is varied with time.

9. The method of claim 8, wherein a flow rate ratio of the ethylene gas in the mixture gas is increased with time.

11. A wiring forming method, comprising:

a catalyst metal forming step in which a catalyst metal layer is formed in a bottom portion of a recess of an insulating film formed on a substrate;

a pretreatment step in which catalyst metal particles are formed from the catalyst metal layer and the formed catalyst metal particles are activated; and

a carbon nanotube producing step in which carbon nanotubes are grown in the recess according to the carbon nanotube producing method of claim 1.

12. A wiring forming method, comprising:

a pretreatment step in which a surface of a catalyst metal layer previously formed in a bottom portion of a recess of an insulating film formed on a substrate is activated; and

a carbon nanotube producing step in which carbon nanotubes are grown in the recess according to the carbon nanotube producing method of claim 1.

10. A method of forming a depth-wise wiring in a three-dimensional packaging device formed on a substrate, comprising:

supplying a carbon-containing gas onto the substrate,

wherein supplying a carbon-containing gas includes;

supplying at least an acetylene gas as the carbon-containing gas at an initial stage; and

supplying at least an ethylene gas as the carbon-containing gas at a termination stage.