STACK PACKAGE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING A VARIABLE VOLTAGE

• US 20160254213A1
• Filed: 06/05/2015
• Published: 09/01/2016
• Est. Priority Date: 02/27/2015
• Status: Active Grant

• Current Assignee: SK Hynix Inc.
• Original Assignee: SK Hynix Inc.
• Inventors: KIM, Kyung Whan
• Granted Patent: US 9,536,807 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: G01R 31/318513 Test of Multi-Chip-Moduls
• CPC Class Codes: H01L 2224/13025 the bump connector being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16146 the bump connector connecting to a via connection in the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/16227 the bump connector connecting to a bond pad of the item
• CPC Class Codes: H01L 2224/17181 On opposite sides of the body
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06565 the devices having the same size and there being no auxiliary carrier between the devices
• CPC Class Codes: H01L 23/481 Internal lead connections, e.g. via connections, feedthrough structures
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/14 Integrated circuits
• CPC Class Codes: H01L 2924/1434 Memory
• CPC Class Codes: H03K 3/356113 using additional transistors in the input circuit

Abstract

A stack package may include a first chip, a second chip, a through silicon via (TSV) and an interface circuit unit. The first chip may include a first internal circuit unit driven by an internal voltage. The second chip may be stacked over the first chip. The second chip may include a second internal circuit unit driven by the internal voltage. The TSV may be electrically coupled between the first chip and the second chip. The interface circuit unit may be arranged in the first chip and the second chip. The interface circuit unit may be coupled to the TSV. A portion of the interface circuit unit may be received a variable voltage different from the internal voltage as a driving voltage.

Claims

1. A stack package comprising:

a first chip including a first internal circuit unit driven by an internal voltage;

a second chip including a second internal circuit unit driven by the internal voltage, the second chip stacked over the first chip;

an interconnecting unit electrically coupled between the first chip and the second chip; and

an interface circuit unit arranged in the first chip and the second chip, the interface circuit unit coupled to the interconnecting unit,

wherein a portion of the interface circuit unit is configured to receive a variable voltage different from the internal voltage as a driving voltage.

2. The stack package of claim 1, wherein the interface circuit unit comprises:

a transmitter; and

a receiver coupled to the transmitter and the interconnecting unit.

3. The stack package of claim 2, wherein the transmitter is configured to receive the variable voltage as the driving voltage, and the receiver is configured to receive the internal voltage as the driving voltage.

4. The stack package of claim 2, wherein the internal voltage comprises a peripheral voltage.

5. The stack package of claim 4, wherein the peripheral voltage is generated by a peripheral voltage generating circuit, the peripheral voltage generating circuit comprising:

a comparing unit configured to receive a reference voltage; and

a PMOS transistor connected to the external voltage, the PMOS transistor configured to be selectively turned-on by an output signal of the comparing unit,

wherein a voltage at a drain of the PMOS transistor is the peripheral voltage and the peripheral voltage is feedback to an input terminal of the comparing unit.

6. The stack package of claim 2, further comprising:

a level shifter electrically coupled between the first internal circuit unit and the transmitter of the interface circuit unit arranged in the first chip or between the second internal circuit unit and the transmitter, the level shifter configured to receive the internal voltage and to output the variable voltage.

7. The stack package of claim 1, further comprising a variable voltage generator configured to generate the variable voltage.

8. The stack package of claim 7, wherein the variable voltage generator comprises:

a voltage dividing unit configured to receive an external voltage and to generate a plurality of dividing voltages;

a comparing unit configured to receive any one of the dividing voltages as a reference voltage; and

a PMOS transistor connected to the external voltage, the PMOS transistor configured to be selectively turned-on by an output signal of the comparing unit,

wherein a voltage at a drain of the PMOS transistor is the variable voltage and the variable voltage is feedback to an input terminal of the comparing unit.

9. The stack package of claim 8, wherein a transfer gate driven by a fuse-selecting signal is connected to each of output terminals of the voltage dividing unit from which the dividing voltages are outputted, and any one of the dividing voltages is fixed to the reference voltage by the fuse-selecting signal.

10. The stack package of claim 1, wherein the first chip comprises a master chip, and the second chip comprises a slave chip.

11. The stack package of claim 10, further comprising:

a controller coupled to the master chip and configured to send and receive an interface control command and data to the master chip; and

a package substrate, the master chip mounted on the package substrate.

12. The stack package of claim 10,

wherein the first internal circuit unit includes a control circuit, and

wherein the second internal circuit unit includes a memory circuit.

13. The stack package of claim 1, wherein the first chip and the second chip comprise a slave chip.

14. The stack package of claim 13, wherein the first and the second internal circuit units include a memory circuit.

15. The stack package of claim 1, wherein the interconnecting unit comprises:

through silicon vias (TSVs) formed in the first and second chips; and

a connecting terminal electrically coupled between the TSVs.

16. A semiconductor integrated circuit device comprising:

a first internal circuit unit;

a transmitter coupled to the first internal circuit unit;

a receiver coupled to the transmitter; and

a second internal circuit unit coupled to the receiver,

wherein the first internal circuit unit, the receiver and the second internal circuit unit are configured to receive an internal voltage as a driving voltage, and the transmitter is configured to receive a variable voltage greater or less than the internal voltage as the driving voltage.

17. The semiconductor integrated circuit device of claim 16, further comprising a level shifter coupled between the first internal circuit unit and the transmitter, the level shifter configured to receive a peripheral voltage and to output the variable voltage.

18. The semiconductor integrated circuit device of claim 16, further comprising a variable voltage generator configured to generate the variable voltage.

19. The semiconductor integrated circuit device of claim 18, wherein the variable voltage generator comprises:

a voltage dividing unit configured to receive an external voltage and to generate a plurality of dividing voltages;

a comparing unit configured to receive any one of the dividing voltages as a reference voltage; and

a PMOS transistor connected to the external voltage, the PMOS transistor configured to be selectively turned-on by an output signal of the comparing unit,

wherein a voltage at a drain of the PMOS transistor is the variable voltage and the variable voltage is feedback to an input terminal of the comparing unit.

20. The semiconductor integrated circuit device of claim 19, wherein a transfer gate driven by a fuse-selecting signal is connected to each of output terminals of the voltage dividing unit from which the dividing voltages are outputted, and any one of the dividing voltages is fixed to the reference voltage by the fuse-selecting signal.

21. The semiconductor integrated circuit device of claim 16, further comprising a through silicon via (TSV) connected between connection nodes of the transmitter and the receiver, the TSV electrically coupled with a lower semiconductor chip.