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ADJACENT DEVICE ISOLATION

  • US 20160254261A1
  • Filed: 02/26/2015
  • Published: 09/01/2016
  • Est. Priority Date: 02/26/2015
  • Status: Active Grant
First Claim
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1. An integrated circuit (IC) device, comprising:

  • a first active transistor of a first-type in a first-type region, having a first-type work function material and a channel dopant concentration in an active portion of the first active transistor; and

    a first isolation transistor of the first-type in the first-type region having a second-type work function material and the channel dopant concentration in an active portion of the first isolation transistor, the first isolation transistor being adjacent to the first active transistor.

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