SOLID-STATE IMAGING DEVICE, IMAGING DEVICE, SOLID-STATE IMAGING DEVICE MANUFACTURING METHOD

• US 20160254299A1
• Filed: 05/09/2016
• Published: 09/01/2016
• Est. Priority Date: 12/10/2013
• Status: Abandoned Application

• Current Assignee: Olympus Corporation
• Original Assignee: Olympus Corporation
• Inventors: Gomi, Yuichi
• Application Number:
  US15/149,955
• Publication Number:
  US 20160254299A1
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H01L 2224/16145 the bodies being stacked
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2225/06513 Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06541 Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
• CPC Class Codes: H01L 2225/06555 Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
• CPC Class Codes: H01L 2225/06593 Mounting aids permanently on device; arrangements for alignment
• CPC Class Codes: H01L 25/065 the devices being of a type provided for in group H01L27/00
• CPC Class Codes: H01L 25/0657 Stacked arrangements of devices
• CPC Class Codes: H01L 25/07 the devices being of a type provided for in group H01L29/00
• CPC Class Codes: H01L 25/18 the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 27/14634 Assemblies, i.e. Hybrid structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/1464 Back illuminated imager structures
• CPC Class Codes: H01L 27/1469 Assemblies, i.e. hybrid integration
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array

Abstract

A solid-state imaging device includes a plurality of substrates provided to be overlapped and a connection structure. Each of the substrates includes a semiconductor layer in which a photoelectric conversion unit configured to convert incident light to a signal is formed, and an interconnection layer in which an interconnection configured to transmit the signal is formed and which overlaps the semiconductor layer. The semiconductor layer of a first substrate and the interconnection layer of a second substrate in two adjacent substrates among the plurality of substrates are disposed to face each other. The connection structure electrically connects the interconnection layer of the first substrate and the interconnection layer of the second substrate, and passes through only the semiconductor layer of the first substrate out of the semiconductor layer of the first substrate and the interconnection layer of the second substrate.

Claims

1. A solid-state imaging device, comprising:

a plurality of substrates provided to be overlapped; and

a connection structure,

wherein each of the substrates includes a semiconductor layer in which a photoelectric conversion unit configured to convert incident light to a signal is formed, and an interconnection layer in which an interconnection configured to transmit the signal is formed and which overlaps the semiconductor layer,

the semiconductor layer of a first substrate and the interconnection layer of a second substrate in two adjacent substrates among the plurality of substrates are disposed to face each other, and

the connection structure is formed on a surface which faces the semiconductor layer of the first substrate of the interconnection layer of the second substrate to electrically connect the interconnection layer of the first substrate and the interconnection layer of the second substrate, and passes through only the semiconductor layer of the first substrate out of the semiconductor layer of the first substrate and the interconnection layer of the second substrate.

2. The solid-state imaging device according to claim 1, further comprising:

a resin layer that is formed between the semiconductor layer of the first substrate and the interconnection layer of the second substrate.

3. The solid-state imaging device according to claim 2,

wherein the periphery of a portion which passes through the semiconductor layer of the connection structure is covered with a resin.

4. The solid-state imaging device according to claim 1, further comprising:

a support substrate that overlaps a substrate which is disposed on an outermost side among the plurality of substrates,

wherein the support substrate includes a processing circuit that processes the signal that is generated in the photoelectric conversion unit formed in any one of the plurality of substrates.

5. The solid-state imaging device according to claim 1, further comprising:

a support substrate that overlaps a substrate which is disposed on an outermost side among the plurality of substrates,

wherein the support substrate includes a drive circuit that drives a pixel including the photoelectric conversion unit formed in any one of the plurality of substrates.

6. The solid-state imaging device according to claim 1,

wherein a substrate that is disposed on an outermost side among the plurality of substrates, the substrate, in which the semiconductor layer is disposed on an outer side in comparison to the interconnection layer, includes an electrode that is electrically connected to the interconnection layer of the substrate and is exposed to an outer side.

7. The solid-state imaging device according to claim 1, further comprising:

a support substrate that overlaps a substrate which is disposed on an outermost side among the plurality of substrates,

wherein the support substrate includes an electrode that is electrically connected to the interconnection layer of the substrate which overlaps the support substrate among the plurality of substrates and is exposed to an outer side.

8. An imaging device, comprising:

the solid-state imaging device according to claim 1.

9. A method of manufacturing a solid-state imaging device, comprising:

etching a part of a semiconductor layer of a first substrate including the semiconductor layer in which a photoelectric conversion unit configured to convert incident light to a signal is formed, and an interconnection layer in which an interconnection configured to transmit the signal is formed and which overlaps the semiconductor layer, to expose the interconnection layer of the first substrate;

forming a connection structure which is electrically connected to the interconnection layer of a second substrate including the semiconductor layer and the interconnection layer on a surface of the interconnection layer of the second substrate; and

electrically connecting the connection structure which is formed on the surface of the interconnection layer of the second substrate to the interconnection layer of the first substrate which is exposed by the etching of the semiconductor layer of the first substrate in a state in which the semiconductor layer of the first substrate and the interconnection layer of the second substrate face each other.