LIGHT EMITTING DEVICE AND FABRICATING METHOD THEREOF
First Claim
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1. A light emitting device, comprising:
- a circuit board, comprising a plurality of electrode pads;
a light emitting unit, comprising a semiconductor epitaxial structure layer, a first electrode, and a second electrode, wherein the first electrode and the second electrode are respectively disposed on the same side of the semiconductor epitaxial structure layer; and
an anisotropic conductive layer, wherein the first electrode and the second electrode are electrically connected with the electrode pads through the anisotropic conductive layer.
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Abstract
A light emitting device including a circuit board, a light emitting unit, and an anisotropic conductive layer is provided. The circuit board includes a plurality of electrode pads. The light emitting unit includes a semiconductor epitaxial structure layer, a first electrode, and a second electrode. The first electrode and the second electrode are respectively disposed on the same side of the semiconductor epitaxial structure layer. The first electrode and the second electrode are electrically connected to the electrode pads through the anisotropic conductive layer. A fabricating method of a light emitting device is also provided.
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Citations
17 Claims
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1. A light emitting device, comprising:
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a circuit board, comprising a plurality of electrode pads; a light emitting unit, comprising a semiconductor epitaxial structure layer, a first electrode, and a second electrode, wherein the first electrode and the second electrode are respectively disposed on the same side of the semiconductor epitaxial structure layer; and an anisotropic conductive layer, wherein the first electrode and the second electrode are electrically connected with the electrode pads through the anisotropic conductive layer. - View Dependent Claims (2, 3, 4, 5)
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6. A fabricating method of a light emitting device, comprising:
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providing a circuit board comprising a plurality of electrode pads; providing a light emitting unit, wherein the light emitting unit comprises a semiconductor epitaxial structure layer and a first electrode and a second electrode disposed on the semiconductor epitaxial structure layer; attaching an anisotropic conductive layer to the circuit board or the light emitting unit; aligning the first electrode and the second electrode to the electrode pads; and performing a process on the anisotropic conductive layer, such that the first electrode and the second electrode are electrically connected with the electrode pads. - View Dependent Claims (7, 8, 9, 10, 11)
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12. A light emitting device, comprising:
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a circuit board; a light emitting unit, comprising; a substrate; a semiconductor epitaxial structure layer, disposed on the substrate; and a first electrode and a second electrode, respectively disposed on the same side of the semiconductor epitaxial structure layer; a light transmissive layer, wherein the light emitting unit is disposed on the light transmissive layer; an encapsulant, located between the light transmissive layer and the light emitting unit, encapsulating the light emitting unit, and exposing at least a part of the first electrode and a part of the second electrode, wherein the first electrode and the second electrode respectively extend outward from the semiconductor epitaxial structure layer and respectively cover a part of an upper surface of the encapsulant; and an anisotropic conductive layer, wherein the first electrode and the second electrode are electrically connected with the circuit board through the anisotropic conductive layer. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification