RESONANT TYPE HIGH FREQUENCY POWER SUPPLY DEVICE AND SWITCHING CIRCUIT FOR RESONANT TYPE HIGH FREQUENCY POWER SUPPLY DEVICE

• US 20160254700A1
• Filed: 10/31/2013
• Published: 09/01/2016
• Est. Priority Date: 10/31/2013
• Status: Active Grant

• Current Assignee: Mitsubshi Electric Engineering Company Limited (Mitsubishi Electric Corporation)
• Original Assignee: Mitsubshi Electric Engineering Company Limited (Mitsubishi Electric Corporation)
• Inventors: AKUZAWA, Yoshiyuki, SAKAI, Kiyohide, EZOE, Toshihiro, ITO, Yuki
• Granted Patent: US 9,882,435 B2
• Time in Patent Office: Days
• US Class Current: 1/1
• CPC Class Codes: H02J 50/05 using capacitive coupling
• CPC Class Codes: H02J 50/12 of the resonant type
• CPC Class Codes: H02M 7/48 using discharge tubes with control electrode or semiconductor devices with control electrode
• CPC Class Codes: H02M 7/4815 Resonant converters H02M7/4811 and H02M7/4826 take precedence
• CPC Class Codes: H02M 7/4818 with means for adaptation of resonance frequency, e.g. by modification of capacitance or inductance of resonance circuits
• CPC Class Codes: Y02B 70/10 Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

Abstract

A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, the power supply device including a second power semiconductor element at least one or more connected in parallel to the power semiconductor element to achieve optimization of parasitic capacitances of the power semiconductor element and the second power semiconductor element itself, and a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to the power semiconductor element and the second power semiconductor element to drive the power semiconductor element and the second power semiconductor element.

Claims

1. A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, said power supply device comprising:

a second power semiconductor element at least one or more connected in parallel to said power semiconductor element to achieve optimization of parasitic capacitances of said power semiconductor element and said second power semiconductor element itself; and

a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said power semiconductor element and said second power semiconductor element to drive said power semiconductor element and said second power semiconductor element.

2. The resonant type high frequency power supply device according to claim 1, further comprising at least one diode or more connected in parallel to said power semiconductor element to achieve optimization of the parasitic capacitance of said power semiconductor element.

4. The resonant type high frequency power supply device according to claim 1, wherein said power semiconductor element is an FET (Field Effect Transistor) other than an FET for RF (Radio Frequency).

6. The resonant type high frequency power supply device according to claim 1, wherein said power semiconductor element has a push-pull configuration or a single configuration.

8. The resonant type high frequency power supply device according to claim 1, wherein said resonant type high frequency power supply device includes a resonance circuit element that causes a resonance condition to match that of a transmission antenna for power transmission according to magnetic resonance and that is comprised of a capacitor and an inductor.

10. The resonant type high frequency power supply device according to claim 1, wherein said resonant type high frequency power supply device includes a resonance circuit element that causes a resonance condition to match that of a transmission antenna for power transmission according to electric resonance and that is comprised of a capacitor and an inductor.

12. The resonant type high frequency power supply device according to claim 1, wherein said resonant type high frequency power supply device includes a resonance circuit element that causes a resonance condition to match that of a transmission antenna for power transmission according to electromagnetic induction and that is comprised of a capacitor and an inductor.

14. The resonant type high frequency power supply device according to claim 8, wherein said resonance circuit element causes the resonance condition to be variable.

16. The resonant type high frequency power supply device according to claim 10, wherein said resonance circuit element causes the resonance condition to be variable.

18. The resonant type high frequency power supply device according to claim 12, wherein said resonance circuit element causes the resonance condition to be variable.

20. The resonant type high frequency power supply device according to claim 8, wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable.

22. The resonant type high frequency power supply device according to claim 10, wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable.

24. The resonant type high frequency power supply device according to claim 12, wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable.

3. A resonant type high frequency power supply device provided with a power semiconductor element that performs a switching operation, said power supply device comprising:

at least one diode or more connected in parallel to said power semiconductor element to achieve optimization of parasitic capacitances of said power semiconductor element and said diode itself; and

a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said power semiconductor element to drive said power semiconductor element.

5. The resonant type high frequency power supply device according to claim 3, wherein said power semiconductor element is an FET (Field Effect Transistor) other than an FET for RF (Radio Frequency).

7. The resonant type high frequency power supply device according to claim 3, wherein said power semiconductor element has a push-pull configuration or a single configuration.

9. The resonant type high frequency power supply device according to claim 3, wherein said resonant type high frequency power supply device includes a resonance circuit element that causes a resonance condition to match that of a transmission antenna for power transmission according to magnetic resonance and that is comprised of a capacitor and an inductor.

11. The resonant type high frequency power supply device according to claim 3, wherein said resonant type high frequency power supply device includes a resonance circuit element that causes a resonance condition to match that of a transmission antenna for power transmission according to electric resonance and that is comprised of a capacitor and an inductor.

13. The resonant type high frequency power supply device according to claim 3, wherein said resonant type high frequency power supply device includes a resonance circuit element that causes a resonance condition to match that of a transmission antenna for power transmission according to electromagnetic induction and that is comprised of a capacitor and an inductor.

15. The resonant type high frequency power supply device according to claim 9, wherein said resonance circuit element causes the resonance condition to be variable.

17. The resonant type high frequency power supply device according to claim 11, wherein said resonance circuit element causes the resonance condition to be variable.

19. The resonant type high frequency power supply device according to claim 13, wherein said resonance circuit element causes the resonance condition to be variable.

21. The resonant type high frequency power supply device according to claim 9, wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable.

23. The resonant type high frequency power supply device according to claim 11, wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable.

25. The resonant type high frequency power supply device according to claim 13, wherein said resonant type high frequency power supply device includes a variable resonance condition circuit that causes the resonance condition of said resonance circuit element to be variable.

26. A switching circuit for a resonant type high frequency power supply device, said switching circuit including a power semiconductor element that performs a switching operation and being used for the resonant type high frequency power supply device, said switching circuit comprising:

said power semiconductor element;

a second power semiconductor element at least one or more element connected in parallel to said power semiconductor element to achieve optimization of parasitic capacitances of said power semiconductor element and said second power semiconductor element itself; and

a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said power semiconductor element and said second power semiconductor element to drive said power semiconductor element and said second power semiconductor element.

28. The switching circuit for the resonant type high frequency power supply device according to claim 26, wherein said switching circuit includes a capacitor that causes a resonance condition to match that of a transmission antenna for power transmission.

27. A switching circuit for a resonant type high frequency power supply device, said switching circuit including a power semiconductor element that performs a switching operation and being used for the resonant type high frequency power supply device, said switching circuit comprising:

said power semiconductor element;

at least one diode or more connected in parallel to said power semiconductor element to achieve optimization of parasitic capacitances of said power semiconductor element and said diode itself; and

a high frequency pulse drive circuit that transmits a pulse-shaped voltage signal having a high frequency exceeding 2 MHz to said power semiconductor element to drive said power semiconductor element.

29. The switching circuit for the resonant type high frequency power supply device according to claim 27, wherein said switching circuit includes a capacitor that causes a resonance condition to match that of a transmission antenna for power transmission.